Diodes Inc. ZTX849
$ 0.58
Production
Cronologia dell'inventario
Tendenza a 3 mesi: +69.23%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
1 parte disponibile
Schede tecniche e documenti
Scarica le schede tecniche e la documentazione del produttore per Diodes Inc. ZTX849.
Parti alternative
Questo componente
Parti alternative
Price @ 1000
$ 0.58
$ 0.577
Stock
191,453
15,100
Authorized Distributors
6
4
Mount
Through Hole
Through Hole
Case/Package
TO-92
TO-92
Polarity
NPN
NPN
Collector Emitter Breakdown Voltage
30 V
30 V
Max Collector Current
5 A
5 A
Transition Frequency
100 MHz
100 MHz
Collector Emitter Saturation Voltage
220 mV
220 mV
hFE Min
30
30
Power Dissipation
1.2 W
1.2 W
Supply Chain
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1994-01-01
Lifecycle StatusProduction (Last Updated: 5 months ago)
Parti correlate
onsemiKSC2328AYTA
30V 1W 2A 120MHz 2V@1.5A30mA NPN +150¡Í@(Tj) TO-92-3LF Bipolar Transistors - BJT ROHS
onsemiKSD471ACYBU
Transistor, bjt, npn,30V V(Br)Ceo,1A I(C),to-92 Rohs Compliant: Yes |Onsemi KSD471ACYBU
Descrizioni
Descrizioni di Diodes Inc. ZTX849 fornite dai suoi distributori.
Power Bipolar Transistor, 5A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin
ZTX849 Series NPN 5 A 30 V Silicon Planar Medium Power Transistor - TO-92-3
TRANSISTOR NPN 30V 5000MA TO92-3
220mV@ 200mA,5A NPN 1.2W 6V 50nA 80V 30V 5A EP-3SC , 4.77mm*2.41mm*4.01mm
TRANSISTOR, NPN, E-LINE; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:30V; Transition Frequency Typ ft:100MHz; Power Dissipation Pd:1.2W; DC Collector Current:5A; DC Current Gain hFE:200; Transistor Case Style:E-Line; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Collector Emitter Voltage Vces:220mV; Continuous Collector Current Ic Max:5A; Current Ic @ Vce Sat:5A; Current Ic Continuous a Max:5A; Current Ic hFE:1A; Full Power Rating Temperature:25°C; Gain Bandwidth ft Typ:100MHz; Hfe Min:100; No. of Transistors:1; Package / Case:E-Line; Power Dissipation Pd:1.2W; Power Dissipation Ptot Max:1.2W; Pulsed Current Icm:20A; Termination Type:Through Hole; Voltage Vcbo:80V
Alias del produttore
Diodes Inc. ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. Diodes Inc. può anche essere conosciuto con i seguenti nomi:
- Diodes Incorporated
- DIODE
- DII
- DIO
- DIODE INC
- DC COMPONENTS
- DIOD
- YENYO
- Diodes Zetex
- MICRO COM
- MICRO ELECTRONIC INS
- Diodes Inc / Zetex
- DIODE INCORPORATED
- DIODES ZET
- DIODSE
- DINC
- Diodes Inc Inc
- DIOINC
- FORMOSA MS
- DIODES INC(RoHS)
- ZETEX (DIODES INC)
- DIODES INC/VISHAY
- Diodes Incorporation
- ZETEXDIODES
- DIODES INC/VISH
- Pericom
- Diodes Incorporated
Cronologia dell'inventario
Tendenza a 3 mesi: +69.23%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
1 parte disponibile
Specifiche tecniche
Physical
Case/PackageTO-92
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight453.59237 mg
Technical
Collector Base Voltage (VCBO)80 V
Collector Emitter Breakdown Voltage30 V
Collector Emitter Saturation Voltage220 mV
Collector Emitter Voltage (VCEO)30 V
Continuous Collector Current5 A
Current Rating5 A
Element ConfigurationSingle
Emitter Base Voltage (VEBO)6 V
Frequency100 MHz
Gain Bandwidth Product100 MHz
hFE Min30
Max Collector Current5 A
Max Operating Temperature200 °C
Max Power Dissipation1.2 W
Manufacturer Package IdentifierE-Line
Min Operating Temperature-55 °C
Number of Elements1
PackagingBulk
PolarityNPN
Power Dissipation1.2 W
Schedule B8541290080
Transition Frequency100 MHz
Voltage Rating (DC)30 V
Dimensions
Height4.01 mm
Length4.77 mm
Width2.41 mm
Schede tecniche e documenti
Scarica le schede tecniche e la documentazione del produttore per Diodes Inc. ZTX849.
Conformità
Classificazione ambientale
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Dichiarazioni di conformità