Diodes Inc. ZTX658

ZTX658 Series 400 V 0.5 A NPN Silicon Planar Medium Power Transistor - TO-92-3
$ 0.43
Production
Pagina del produttoreScheda dati

Prezzo e stock

Vedi tutte le interruzioni di prezzo
DistributorSKUMinPkg
DigiKeyZTX658DI-ND43721Bulk
Arrow ElectronicsZTX6581717298
TME
2
ZTX65801
3h
NewarkZTX65801
RS (Formerly Allied Electronics)ZTX65805Bulk
18h

Schede tecniche e documenti

Scarica le schede tecniche e la documentazione del produttore per Diodes Inc. ZTX658.

Newark

Datasheet3 pagine19 anni fa

IHS

Diodes Inc SCT

Future Electronics

iiiC

Cronologia dell'inventario

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Parti alternative

Questo componente
Parti alternative
Diodes Inc.ZTX658
Diodes Inc.ZTX658STZ
Price @ 1000
$ 0.43
$ 0.421
Stock
231,136
412,008
Authorized Distributors
6
4
Mount
Through Hole
Through Hole
Case/Package
TO-92
TO-92
Polarity
NPN
NPN
Collector Emitter Breakdown Voltage
400 V
400 V
Max Collector Current
500 mA
500 mA
Transition Frequency
50 MHz
50 MHz
Collector Emitter Saturation Voltage
500 mV
500 mV
hFE Min
40
40
Power Dissipation
1 W
-

Supply Chain

Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2002-04-17
Lifecycle StatusProduction (Last Updated: 4 months ago)

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ZTX458 Series NPN 300 mA 400 V Silicon Planar Medium Power Transistor - TO-92-3
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Diodes Inc.ZTX458STZ
Small Signal Bipolar Transistor, 0.3A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon
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Diodes Inc.ZTX657
Bipolar (BJT) Single Transistor, NPN, 300 V, 500 mA, 1 W, E-Line, Through Hole
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onsemiMPSA42
Bipolar (BJT) Single Transistor, NPN, 300 V, 500 mA, 625 mW, TO-92, Through Hole
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onsemiKSP42BU
Small Signal Bipolar Transistor, 0.5A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, TO-92
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onsemi2N6517TA
TRANSISTOR,BJT,NPN,350V V(BR)CEO,500MA I; TRANSISTOR,BJT,NPN,350V V(BR)CEO,500MA I(C),TO-92
Dettagli

Descrizioni

Descrizioni di Diodes Inc. ZTX658 fornite dai suoi distributori.

ZTX658 Series 400 V 0.5 A NPN Silicon Planar Medium Power Transistor - TO-92-3
Future Electronics
Small Signal Bipolar Transistor, 0.5A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon
IHS
500mV@ 10mA,100mA NPN 1W 5V 100nA 400V 400V 500mA TO-92 , 4.77mm*2.41mm*4.01mm
UnikeyIC
Bipolar Transistors - BJT NPN Super E-Line
Digi-ic_SMART PIONEER
BIPOLAR TRANSISTOR, NPN, 400V; Transistor Polarity:NPN; Collector Emitter Voltage, V(br)ceo:400V; Transition Frequency Typ, ft:50MHz; Power Dissipation, Pd:1W; DC Collector Current:500mA; DC Current Gain Max (hfe):50 ;RoHS Compliant: Yes
Newark
TRANSISTOR, NPN, E-LINE; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:400V; Power Dissipation Pd:1W; DC Collector Current:500mA; DC Current Gain hFE:50; Transistor Case Style:E-Line; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Collector Emitter Voltage Vces:500mV; Continuous Collector Current Ic Max:500mA; Current Ic @ Vce Sat:100mA; Current Ic Continuous a Max:500mA; Current Ic hFE:200mA; Full Power Rating Temperature:25°C; Gain Bandwidth ft Min:50MHz; Gain Bandwidth ft Typ:50MHz; Hfe Min:40; No. of Transistors:1; Package / Case:E-Line; Power Dissipation Pd:1W; Power Dissipation Ptot Max:1W; Termination Type:Through Hole; Voltage Vcbo:400V
element14 APAC

Immagini

TME
RS (Formerly Allied Electronics)
Future Electronics
iiiC

Alias del produttore

Diodes Inc. ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. Diodes Inc. può anche essere conosciuto con i seguenti nomi:

  • Diodes Incorporated
  • DIODE
  • DII
  • DIO
  • DIODE INC
  • DC COMPONENTS
  • DIOD
  • YENYO
  • Diodes Zetex
  • MICRO COM
  • MICRO ELECTRONIC INS
  • Diodes Inc / Zetex
  • DIODE INCORPORATED
  • DIODES ZET
  • DIODSE
  • DINC
  • Diodes Inc Inc
  • DIOINC
  • FORMOSA MS
  • DIODES INC(RoHS)
  • ZETEX (DIODES INC)
  • DIODES INC/VISHAY
  • Diodes Incorporation
  • ZETEXDIODES
  • DIODES INC/VISH
  • Pericom
  • Diodes Incorporated

Alias del numero di parte

Questa parte può essere conosciuta con i seguenti numeri di parte alternativi:

  • ZTX 658
  • ZTX658.