Diodes Inc. ZTX558
$ 0.337
EOL
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Distributori autorizzati
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Rivenditori non autorizzati
Cronologia dell'inventario
Tendenza a 3 mesi: -2.06%
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Questo componente
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Price @ 1000
$ 0.337
$ 0.418
Stock
224,112
377,416
Authorized Distributors
6
5
Mount
Through Hole
Through Hole
Case/Package
TO-92
TO-92
Polarity
PNP
PNP
Collector Emitter Breakdown Voltage
400 V
400 V
Max Collector Current
200 mA
200 mA
Transition Frequency
50 MHz
50 MHz
Collector Emitter Saturation Voltage
500 mV
500 mV
hFE Min
100
15
Power Dissipation
1 W
1 W
Supply Chain
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2001-04-20
Lifecycle StatusEOL (Last Updated: 2 weeks ago)
LTB Date2026-10-28
LTD Date2027-04-28
Parti correlate
onsemiKSA1625KBU
Bulk Through Hole PNP Single Bipolar (BJT) Transistor 100 @ 50mA 5V 1muA ICBO 750mW 10MHz
Descrizioni
Descrizioni di Diodes Inc. ZTX558 fornite dai suoi distributori.
Small Signal Bipolar Transistor, 0.2A I(C), 400V V(BR)CEO, 1-Element, PNP, Silicon
ZTX558 Series PNP 200 mA 400 V Silicon Planar Medium Power Transistor - TO-92-3
TRANSISTOR, PNP, E-LINE; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:400V; Transition Frequency Typ ft:50MHz; Power Dissipation Pd:1W; DC Collector Current:200mA; DC Current Gain hFE:100; Operating Temperature Range:-55°C to +200°C; Transistor Case Style:E-Line; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Collector Emitter Voltage Vces:500mV; Continuous Collector Current Ic Max:200mA; Current Ic @ Vce Sat:50mA; Current Ic Continuous a Max:200mA; Current Ic hFE:50mA; Full Power Rating Temperature:25°C; Gain Bandwidth ft Min:50MHz; Gain Bandwidth ft Typ:50MHz; Hfe Min:100; No. of Transistors:1; Package / Case:E-Line; Power Dissipation Pd:1W; Power Dissipation Ptot Max:1W; Termination Type:Through Hole; Voltage Vcbo:400V
Alias del produttore
Diodes Inc. ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. Diodes Inc. può anche essere conosciuto con i seguenti nomi:
- Diodes Incorporated
- DIODE
- DII
- DIO
- DIODE INC
- DC COMPONENTS
- DIOD
- YENYO
- Diodes Zetex
- MICRO COM
- MICRO ELECTRONIC INS
- Diodes Inc / Zetex
- DIODE INCORPORATED
- DIODES ZET
- DIODSE
- DINC
- Diodes Inc Inc
- DIOINC
- FORMOSA MS
- DIODES INC(RoHS)
- ZETEX (DIODES INC)
- DIODES INC/VISHAY
- Diodes Incorporation
- ZETEXDIODES
- DIODES INC/VISH
- Pericom
- Diodes Incorporated
Cronologia dell'inventario
Tendenza a 3 mesi: -2.06%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
1 parte disponibile
Specifiche tecniche
Physical
Case/PackageTO-92
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight453.59237 mg
Technical
Collector Base Voltage (VCBO)400 V
Collector Emitter Breakdown Voltage400 V
Collector Emitter Saturation Voltage500 mV
Collector Emitter Voltage (VCEO)400 V
Continuous Collector Current-200 mA
Current Rating-200 mA
Element ConfigurationSingle
Emitter Base Voltage (VEBO)5 V
Frequency50 MHz
Gain Bandwidth Product50 MHz
hFE Min100
Max Collector Current200 mA
Max Frequency50 MHz
Max Operating Temperature200 °C
Max Power Dissipation1 W
Min Operating Temperature-55 °C
Number of Elements1
PackagingBulk
PolarityPNP
Power Dissipation1 W
Schedule B8541290080
Transition Frequency50 MHz
Voltage Rating (DC)-400 V
Dimensions
Height4.01 mm
Length4.77 mm
Width2.41 mm
Conformità
Classificazione ambientale
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Dichiarazioni di conformità