Diodes Inc. ZTX453
$ 0.328
Production
Cronologia dell'inventario
Tendenza a 3 mesi: -6.26%
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Questo componente
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Price @ 1000
$ 0.328
$ 0.292
Stock
117,270
327,867
Authorized Distributors
6
6
Mount
Through Hole
Through Hole
Case/Package
TO-92
TO-92
Polarity
NPN
NPN
Collector Emitter Breakdown Voltage
100 V
100 V
Max Collector Current
1 A
1 A
Transition Frequency
150 MHz
150 MHz
Collector Emitter Saturation Voltage
700 mV
700 mV
hFE Min
10
10
Power Dissipation
2 W
2 W
Supply Chain
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1997-10-31
Lifecycle StatusProduction (Last Updated: 4 months ago)
Parti correlate
Diodes Inc.ZTX692BSTZ
Small Signal Bipolar Transistor, 1A I(C), 70V V(BR)CEO, 1-Element, NPN, Silicon
Descrizioni
Descrizioni di Diodes Inc. ZTX453 fornite dai suoi distributori.
Small Signal Bipolar Transistor, 1A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon
Diodes Inc ZTX453 NPN 1A 1W BiPolar Transistor
Bipolar Transistors - BJT NPN Medium Power
700mV@ 15mA,150mA NPN 1W 5V 100nA 120V 100V 1A EP-3SC , 4.77mm*2.41mm*4.01mm
TRANSISTOR, NPN, E-LINE; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:100V; Transition Frequency Typ ft:150MHz; Power Dissipation Pd:1W; DC Collector Current:1A; DC Current Gain hFE:40; Transistor Case Style:E-Line; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Collector Emitter Voltage Vces:700mV; Continuous Collector Current Ic Max:1A; Current Ic @ Vce Sat:150mA; Current Ic Continuous a Max:1A; Current Ic hFE:150mA; Gain Bandwidth ft Min:150MHz; Gain Bandwidth ft Typ:150MHz; Hfe Min:40; No. of Transistors:1; Package / Case:E-Line; Pin Configuration:e; Power Dissipation Pd:1W; Power Dissipation Ptot Max:1W; Termination Type:Through Hole; Voltage Vcbo:120V
Alias del produttore
Diodes Inc. ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. Diodes Inc. può anche essere conosciuto con i seguenti nomi:
- Diodes Incorporated
- DIODE
- DII
- DIO
- DIODE INC
- DC COMPONENTS
- DIOD
- YENYO
- Diodes Zetex
- MICRO COM
- MICRO ELECTRONIC INS
- Diodes Inc / Zetex
- DIODE INCORPORATED
- DIODES ZET
- DIODSE
- DINC
- Diodes Inc Inc
- DIOINC
- FORMOSA MS
- DIODES INC(RoHS)
- ZETEX (DIODES INC)
- DIODES INC/VISHAY
- Diodes Incorporation
- ZETEXDIODES
- DIODES INC/VISH
- Pericom
- Diodes Incorporated
Cronologia dell'inventario
Tendenza a 3 mesi: -6.26%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
1 parte disponibile
Specifiche tecniche
Physical
Case/PackageTO-92
Contact PlatingTin
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight453.59237 mg
Technical
Collector Base Voltage (VCBO)120 V
Collector Emitter Breakdown Voltage100 V
Collector Emitter Saturation Voltage700 mV
Collector Emitter Voltage (VCEO)100 V
Continuous Collector Current1 A
Current Rating1 A
Element ConfigurationSingle
Emitter Base Voltage (VEBO)5 V
Frequency150 MHz
Gain Bandwidth Product150 MHz
hFE Min10
Max Collector Current1 A
Max Operating Temperature200 °C
Max Power Dissipation1 W
Manufacturer Package IdentifierE-Line
Min Operating Temperature-55 °C
Number of Elements1
PackagingBulk
PolarityNPN
Power Dissipation2 W
Transition Frequency150 MHz
Voltage Rating (DC)100 V
Dimensions
Height4.01 mm
Length4.77 mm
Width2.41 mm
Conformità
Classificazione ambientale
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Dichiarazioni di conformità