Diodes Inc. MMDT5451-7-F
$ 0.111
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| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Newark | MMDT5451-7-F | 3454 | 5 | Cut Tape | ||||||||
| Arrow Electronics | MMDT5451-7-F | 5800 | 3831 | |||||||||
| DigiKey | MMDT5451-FDICT-ND | 505 | 1 | Cut Tape | ||||||||
| TME | MMDT5451-7-F | 1954 | 1 | 38m | ||||||||
| Avnet | MMDT5451-7-F | 0 | 3K | 1d |
Cronologia dell'inventario
Tendenza a 3 mesi: -65.34%
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Parti correlate
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Small Signal Bipolar Transistor, 0.2A I(C), 150V V(BR)CEO, 2-Element, PNP, Silicon
Diodes Inc.MMDT3904-7-F
Transistor General Purpose BJT NPN 40 Volt 0.2A Automotive 6-Pin SOT-363
Descrizioni
Descrizioni di Diodes Inc. MMDT5451-7-F fornite dai suoi distributori.
Bipolar Transistor Array, Dual, Complementary NPN and PNP, 160 V, 160 V, 200 mA, 200 mA, 200 mW
MMDT5451 Series NPN/PNP 160 V 200 mW Small Signal Transistor SMT - SOT-363
Trans GP BJT NPN/PNP 160V 0.2A 200mW 6-Pin SOT-363 T/R / TRANS NPN/PNP 160V/150V SOT363
Small Signal Bipolar Transistor, 0.2A I(C), 160V V(BR)CEO, 2-Element, NPN and PNP, Silicon
General Purpose Transistors NPN,PNP Ic=200mA Vceo=160V,150V hfe=80~250/60~240 P=320mW SOT363
GP BJT NPN/PNP 160/150V 0.2A 6P SOT363 | Diodes Inc MMDT5451-7-F
DiodesZetex NPN/PNP, SOT-363 (SC-88), , 200 mA, -160 V
TRANSISTOR, NPN/PNP, SOT363; Transistor Polarity: NPN, PNP; Collector Emitter Voltage V(br)ceo: 160V; Power Dissipation Pd: 200mW; DC Collector Current: 200mA; DC Current Gain hFE: 80hFE; Transistor Case Style: SOT-363; No. of Pins: 6Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019); Collector Emitter Saturation Voltage Vce(on): 200mV; Current Ic Continuous a Max: 200mA; Gain Bandwidth ft Typ: 300MHz; Hfe Min: 80; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Termination Type: Surface Mount Device; Transistor Type: Small Signal
Transistor, Npn/Pnp, Sot363; Transistor, Polaridad:Npn, Pnp; Tensión Colector Emisor V(Br)Ceo:160V; Disipación De Potencia Pd:200Mw; Corriente De Colector Dc:200Ma; Ganancia De Corriente Dc Hfe:80; Núm. De Contactos:6 |Diodes Inc. MMDT5451-7-F
Alias del produttore
Diodes Inc. ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. Diodes Inc. può anche essere conosciuto con i seguenti nomi:
- Diodes Incorporated
- DIODE
- DII
- DIO
- DIODE INC
- DC COMPONENTS
- DIOD
- YENYO
- Diodes Zetex
- MICRO COM
- MICRO ELECTRONIC INS
- Diodes Inc / Zetex
- DIODE INCORPORATED
- DIODES ZET
- DIODSE
- DINC
- Diodes Inc Inc
- DIOINC
- FORMOSA MS
- DIODES INC(RoHS)
- ZETEX (DIODES INC)
- DIODES INC/VISHAY
- Diodes Incorporation
- ZETEXDIODES
- DIODES INC/VISH
- Pericom
- Diodes Incorporated
Cronologia dell'inventario
Tendenza a 3 mesi: -65.34%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
0 parti disponibili
Specifiche tecniche
Physical
Case/PackageSOT-363
MountSurface Mount
Number of Pins6
Number of Terminals6
Weight6.010099 mg
Technical
Collector Base Voltage (VCBO)180 V
Collector Emitter Breakdown Voltage150 V
Collector Emitter Saturation Voltage200 mV
Collector Emitter Voltage (VCEO)160 V
Continuous Collector Current-200 mA
Current Rating200 mA
Element ConfigurationDual
Emitter Base Voltage (VEBO)-5 V
Frequency300 MHz
Gain Bandwidth Product300 MHz
hFE Min30
Max Breakdown Voltage150 V
Max Collector Current200 mA
Max Frequency300 MHz
Max Operating Temperature150 °C
Max Power Dissipation200 mW
Min Operating Temperature-55 °C
Number of Elements2
PackagingCut Tape
PolarityNPN, PNP
Power Dissipation200 mW
Schedule B8541210080
Transition Frequency100 MHz
Voltage Rating (DC)160 V
Dimensions
Height1 mm
Length2.2 mm
Width1.35 mm
Conformità
Classificazione ambientale
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Dichiarazioni di conformità