Diodes Inc. FZT857TA
$ 0.447
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Cronologia dell'inventario
Tendenza a 3 mesi: +30.80%
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Questo componente
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Price @ 1000
$ 0.447
$ 0.727
Stock
539,012
119,448
Authorized Distributors
6
3
Mount
Surface Mount
-
Case/Package
SOT-223-4
SOT-223
Polarity
NPN
NPN
Collector Emitter Breakdown Voltage
300 V
300 V
Max Collector Current
3.5 A
3.5 A
Transition Frequency
80 MHz
80 MHz
Collector Emitter Saturation Voltage
345 mV
345 mV
hFE Min
100
100
Power Dissipation
3 W
3 W
Supply Chain
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.75
Introduction Date1993-01-01
Lifecycle StatusProduction (Last Updated: 4 months ago)
Descrizioni
Descrizioni di Diodes Inc. FZT857TA fornite dai suoi distributori.
Bipolar (BJT) Single Transistor, NPN, 300 V, 3.5 A, 3 W, SOT-223, Surface Mount
Trans GP BJT NPN 300V 3.5A 3000mW 4-Pin(3+Tab) SOT-223 T/R / TRANS NPN 300V 3.5A SOT-223
300V 3W 100@500mA,10V 3.5A NPN SOT-223 Bipolar Transistors - BJT ROHS
FZT857 Series NPN 3.5 A 300 V SMT Silicon High Performance Transistor - SOT-223
General Purpose Transistors NPN Ic=3.5A Vceo=300V hfe=100~300 P=3W SOT223
SOT223 NPN SILICON PLANAR HIGH CURRENT (HIGH PERFORMANCE) TRANSISTOR Power Bipolar Transistor, 3.5A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4 Pin
Bipolar Transistors - BJT NPN High Voltage
TRANSISTOR, NPN, REEL 1K; Transistor Polarity:NPN; Collector-to-Emitter Breakdown Voltage:300V; Typ Gain Bandwidth ft:80MHz; Power Dissipation Pd:3W; DC Collector Current:3.5A; DC Current Gain hFE:200; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOT-223; Case Style:SOT-223; Current Ic Hfe NPN Device:0.5A; Current Ic hFE:1A; Full Power Rating Temperature:25°C; Max Current Ic:3.5A; Max Current Ic Continuous a:3.5A; Max Power Dissipation Ptot:3W; Max Voltage Vce Sat:100mV; Min Hfe:100; No. of Transistors:1; Power Dissipation:3W; Pulsed Current Icm:5A; Reel Quantity:1000; SMD Marking:FZT857; Tape Width:12mm; Termination Type:SMD; Transistor Type:Bipolar; Voltage Vcbo:350V
Alias del produttore
Diodes Inc. ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. Diodes Inc. può anche essere conosciuto con i seguenti nomi:
- Diodes Incorporated
- DIODE
- DII
- DIO
- DIODE INC
- DC COMPONENTS
- DIOD
- YENYO
- Diodes Zetex
- MICRO COM
- MICRO ELECTRONIC INS
- Diodes Inc / Zetex
- DIODE INCORPORATED
- DIODES ZET
- DIODSE
- DINC
- Diodes Inc Inc
- DIOINC
- FORMOSA MS
- DIODES INC(RoHS)
- ZETEX (DIODES INC)
- DIODES INC/VISHAY
- Diodes Incorporation
- ZETEXDIODES
- DIODES INC/VISH
- Pericom
- Diodes Incorporated
Cronologia dell'inventario
Tendenza a 3 mesi: +30.80%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
1 parte disponibile
Specifiche tecniche
Physical
Case/PackageSOT-223-4
Contact PlatingTin
MountSurface Mount
Number of Pins3
Number of Terminals4
Weight7.994566 mg
Technical
Collector Base Voltage (VCBO)350 V
Collector Emitter Breakdown Voltage300 V
Collector Emitter Saturation Voltage345 mV
Collector Emitter Voltage (VCEO)300 V
Continuous Collector Current3.5 A
Current Rating3.5 A
Element ConfigurationSingle
Emitter Base Voltage (VEBO)6 V
Frequency80 MHz
Gain Bandwidth Product80 MHz
hFE Min100
Max Breakdown Voltage300 V
Max Collector Current3.5 A
Max Frequency80 MHz
Max Operating Temperature150 °C
Max Power Dissipation3 W
Min Operating Temperature-55 °C
Number of Elements1
PolarityNPN
Power Dissipation3 W
Schedule B8541290080
TerminationSMD/SMT
Transition Frequency80 MHz
Voltage Rating (DC)300 V
Dimensions
Height1.65 mm
Length6.7 mm
Width3.7 mm
Conformità
Classificazione ambientale
China RoHSNon-Compliant
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Dichiarazioni di conformità