Diodes Inc. FZT1049ATA

Power Bipolar Transistor, 5A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4 Pin
$ 0.362
Production
Pagina del produttoreScheda dati

Prezzo e stock

Schede tecniche e documenti

Scarica le schede tecniche e la documentazione del produttore per Diodes Inc. FZT1049ATA.

IHS

Datasheet7 pagine10 anni fa
Datasheet3 pagine28 anni fa

Components Direct

Diodes Inc SCT

Future Electronics

iiiC

Cronologia dell'inventario

Trend di 3 mesi:
-6.37%

Modelli CAD

Scarica il simbolo Diodes Inc. FZT1049ATA, l'impronta e i modelli STEP 3D dai nostri partner di fiducia.

FONTEeCADmCADFILE
Component Search Engine
SimboloImpronta
3DScarica
Il sito del partner si aprirà in una nuova scheda quando si scaricano i modelli CAD
Scaricando i modelli CAD da Octopart, accetti i nostri Termini e condizioni e l'Informativa sulla privacy.

Supply Chain

Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1997-11-03
Lifecycle StatusProduction (Last Updated: 4 months ago)

Parti correlate

Diodes Inc.FZT1048ATA
FZT1048 Series NPN 17.5 V 5 A 500 mW High Voltage Transistor - SOT223
Diodes Inc.DZT3150-13
DZT3150 Series 25 V 5 A NPN Surface Mount Transistor - SOT-223
onsemiFZT649
Power Bipolar Transistor, 3A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4 Pin
Diodes Inc.FZT649TA
Power Bipolar Transistor, 3A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4 Pin
onsemiPZTA14
PZTA14 Series 30 V CE Breakdown 1.2 A NPN Darlington Transistor - SOT-223
onsemiBCP68
Trans GP BJT NPN 20V 1A 1500mW 4-Pin(3+Tab) SOT-223 T/R / TRANS NPN 20V 1A SOT-223

Descrizioni

Descrizioni di Diodes Inc. FZT1049ATA fornite dai suoi distributori.

Power Bipolar Transistor, 5A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4 Pin
FZT1049A Series NPN 5 A 30 V SMT Silicon Medium Power Transistor - SOT-223
Trans GP BJT NPN 25V 5A 3000mW 4-Pin(3+Tab) SOT-223 T/R
TRANSISTOR, NPN, REEL 1K; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:30V; Transition Frequency ft:180MHz; Power Dissipation Pd:2.5W; DC Collector Current:5A; DC Current Gain hFE:450hFE; Transistor Case S
TRANSISTOR, NPN, REEL 1K; Transistor Polarity:NPN; Collector-to-Emitter Breakdown Voltage:30V; Typ Gain Bandwidth ft:180MHz; Power Dissipation Pd:2.5W; DC Collector Current:5A; DC Current Gain hFE:450; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOT-223; Case Style:SOT-223; Current Ic @ Vce Sat:5A; Current Ic hFE:1A; Full Power Rating Temperature:25°C; Max Current Ic:5A; Max Current Ic Continuous a:5A; Max Power Dissipation Ptot:2.5W; Max Voltage Vce Sat:330mV; Min Hfe:300; No. of Transistors:1; Power Dissipation:2.5W; Pulsed Current Icm:20A; Reel Quantity:1000; SMD Marking:FZT1049A; Tape Width:12mm; Termination Type:SMD; Transistor Type:Bipolar; Voltage Vcbo:80V

Alias del produttore

Diodes Inc. ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. Diodes Inc. può anche essere conosciuto con i seguenti nomi:

  • Diodes Incorporated
  • DIODE
  • DII
  • DIO
  • DIODE INC
  • DC COMPONENTS
  • DIOD
  • YENYO
  • Diodes Zetex
  • MICRO COM
  • MICRO ELECTRONIC INS
  • Diodes Inc / Zetex
  • DIODE INCORPORATED
  • DIODES ZET
  • DIODSE
  • DINC
  • Diodes Inc Inc
  • DIOINC
  • FORMOSA MS
  • DIODES INC(RoHS)
  • ZETEX (DIODES INC)
  • DIODES INC/VISHAY
  • Diodes Incorporation
  • ZETEXDIODES
  • DIODES INC/VISH
  • Pericom
  • Diodes Incorporated