Diodes Inc. FMMT494TA
$ 0.17
Production
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Distributori autorizzati
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Rivenditori non autorizzati
Cronologia dell'inventario
Tendenza a 3 mesi: +210%
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Price @ 1000
$ 0.17
$ 0.196
Stock
283,684
822,819
Authorized Distributors
6
5
Mount
Surface Mount
Surface Mount
Case/Package
SOT-23
SOT-23
Polarity
NPN
NPN
Collector Emitter Breakdown Voltage
120 V
120 V
Max Collector Current
1 A
1 A
Transition Frequency
100 MHz
100 MHz
Collector Emitter Saturation Voltage
300 mV
300 mV
hFE Min
20
20
Power Dissipation
500 mW
500 mW
Supply Chain
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1992-02-01
Lifecycle StatusProduction (Last Updated: 4 months ago)
Descrizioni
Descrizioni di Diodes Inc. FMMT494TA fornite dai suoi distributori.
Bipolar (BJT) Single Transistor, NPN, 120 V, 500 mA, 500 mW, SOT-23, Surface Mount
FMMT494 Series NPN 1 A 120 V SMT Silicon Medium Power Transistor - SOT-23
Small Signal Bipolar Transistor, 1A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon
Trans GP BJT NPN 120V 1A 500mW 3-Pin SOT-23 T/R
Bipolar Transistors - BJT NPN Medium Power
300mV@ 50mA,500mA NPN 500mW 7V 100nA 140V 120V 1A SOT-23-3 1.12mm
TRANSISTOR, NPN, 120V, SOT-23; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:120V; Transition Frequency ft:-; Power Dissipation Pd:500mW; DC Collector Current:500mA; DC Current Gain hFE:100hFE; Transistor C
TRANSISTOR, NPN, 120V, SOT-23; Transistor Polarity:NPN; Collector-to-Emitter Breakdown Voltage:120V; Typ Gain Bandwidth ft:100MHz; Power Dissipation Pd:500mW; DC Collector Current:500mA; DC Current Gain hFE:100; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOT-23; Case Style:SOT-23; Current Ib:0.2A; Current Ic hFE:1A; Max Current Ic:1A; Max Current Ic Continuous a:500mA; Max Power Dissipation Ptot:0.5W; Max Voltage Vce Sat:0.3V; Min Hfe:20; Power Dissipation:500mW; Termination Type:SMD; Transistor Type:Bipolar; Voltage Vcbo:140V
Alias del produttore
Diodes Inc. ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. Diodes Inc. può anche essere conosciuto con i seguenti nomi:
- Diodes Incorporated
- DIODE
- DII
- DIO
- DIODE INC
- DC COMPONENTS
- DIOD
- YENYO
- Diodes Zetex
- MICRO COM
- MICRO ELECTRONIC INS
- Diodes Inc / Zetex
- DIODE INCORPORATED
- DIODES ZET
- DIODSE
- DINC
- Diodes Inc Inc
- DIOINC
- FORMOSA MS
- DIODES INC(RoHS)
- ZETEX (DIODES INC)
- DIODES INC/VISHAY
- Diodes Incorporation
- ZETEXDIODES
- DIODES INC/VISH
- Pericom
- Diodes Incorporated
Cronologia dell'inventario
Tendenza a 3 mesi: +210%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
1 parte disponibile
Specifiche tecniche
Physical
Case/PackageSOT-23
Contact PlatingTin
MountSurface Mount
Number of Pins3
Number of Terminals3
Weight7.994566 mg
Technical
Collector Base Voltage (VCBO)140 V
Collector Emitter Breakdown Voltage120 V
Collector Emitter Saturation Voltage300 mV
Collector Emitter Voltage (VCEO)120 V
Continuous Collector Current1 A
Current Rating100 mA
Element ConfigurationSingle
Emitter Base Voltage (VEBO)7 V
Frequency100 MHz
Gain Bandwidth Product100 MHz
hFE Min20
Max Breakdown Voltage120 V
Max Collector Current1 A
Max Frequency100 MHz
Max Operating Temperature150 °C
Max Power Dissipation500 mW
Min Operating Temperature-55 °C
Number of Elements1
PolarityNPN
Power Dissipation500 mW
Schedule B8541210080
Transition Frequency100 MHz
Voltage Rating (DC)120 V
Dimensions
Height1.1 mm
Length3 mm
Width1.4 mm
Conformità
Classificazione ambientale
China RoHSCompliant
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Dichiarazioni di conformità