Infineon IRF9130
$ 20.805
Production
Prezzo e stock
Distributori autorizzati
Distributori di stock non autorizzati
Rivenditori non autorizzati
Cronologia dell'inventario
Tendenza a 3 mesi: -19.90%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
1 parte disponibile
Parti alternative
Questo componente
Parti alternative
Price @ 1000
$ 20.805
$ 79.2
$ 79.2
Stock
6,683
18,392
18,392
Authorized Distributors
4
1
1
Mount
Through Hole
Through Hole
Through Hole
Case/Package
TO-3
-
-
Drain to Source Voltage (Vdss)
-100 V
-
-
Continuous Drain Current (ID)
11 A
11 A
11 A
Threshold Voltage
-4 V
-
-
Rds On Max
-
-
-
Gate to Source Voltage (Vgs)
20 V
20 V
20 V
Power Dissipation
75 W
75 W
75 W
Input Capacitance
-
-
-
Descrizioni
Descrizioni di Infineon IRF9130 fornite dai suoi distributori.
Benefits: Hermetically packaged power MOSFET; Packaged on a MIL-PRF-19500 manufacturing line
-100V Single P-Channel Hi-Rel MOSFET in a TO-204AA package, TO-204AA-2
Infineon SCT
100V, P-CHANNEL REPETITIVE AVALANCHE AND DV/DT RATED HEXFET TRANSISTOR Power Field-Effect Transistor, 11A I(D), 100V, 0.35ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA
MOSFET; Transistor Type:MOSFET; Transistor Polarity:P Channel; Drain Source Voltage, Vds:-100V; Continuous Drain Current, Id:-11A; On Resistance, Rds(on):0.3ohm; Rds(on) Test Voltage, Vgs:-10V; Package/Case:TO-204AA ;RoHS Compliant: No
MOSFET, P, TO-3; Transistor Polarity:P Channel; Continuous Drain Current Id:11A; Drain Source Voltage Vds:100V; On Resistance Rds(on):300mohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs Typ:-4V; Power Dissipation Pd:75W; Transistor Case Style:TO-3; No. of Pins:2; SVHC:No SVHC (20-Jun-2011); Avalanche Single Pulse Energy Eas:81mJ; Current Iar:11A; Current Id Max:-11A; Current Temperature:25°C; Fixing Centres:30mm; Full Power Rating Temperature:25°C; Junction Temperature Tj Max:150°C; Junction Temperature Tj Min:-55°C; Lead Spacing:11mm; No. of Transistors:1; Package / Case:TO-3; Power Dissipation Pd:75W; Power Dissipation Pd:75W; Pulse Current Idm:50A; Repetitive Avalanche Energy Max:7.5mJ; Termination Type:Through Hole; Voltage Vds Typ:-100V; Voltage Vgs Max:-4V; Voltage Vgs Rds on Measurement:-10V; Voltage Vgs th Max:-4V; Weight:0.012kg
Alias del produttore
Infineon ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. Infineon può anche essere conosciuto con i seguenti nomi:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- INFINEON TECHNOLOGIES (ASIA
- INFINEON TECHNO
- Infineon Technologies Americas Corp
Cronologia dell'inventario
Tendenza a 3 mesi: -19.90%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
1 parte disponibile
Specifiche tecniche
Physical
Body MaterialMetal
Case/PackageTO-3
MountThrough Hole
Number of Pins2
Number of Terminals2
Weight12 g
Technical
Continuous Drain Current (ID)11 A
Drain to Source Breakdown Voltage-100 V
Drain to Source Resistance350 mΩ
Drain to Source Voltage (Vdss)-100 V
Dual Supply Voltage-100 V
Gate to Source Voltage (Vgs)20 V
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation75 W
Min Breakdown Voltage100 V
Min Operating Temperature-55 °C
Nominal Vgs-4 V
Number of Channels1
Number of Elements1
On-State Resistance300 mΩ
Power Dissipation75 W
Schedule B8541290080
TerminationThrough Hole
Threshold Voltage-4 V
Turn-Off Delay Time140 ns
Turn-On Delay Time60 ns
Dimensions
Height7.74 mm
Lead Pitch11 mm
Conformità
Classificazione ambientale
Radiation HardeningNo
REACH SVHCYes
RoHSNon-Compliant
Dichiarazioni di conformità