Texas Instruments TLC082CDR

Dual 3pA 19V/us 10MHz 1900uV SOIC-8 Operational Amplifier ROHS

Op Amp Dual Wideband Amplifier ±8V/16V 8-Pin SOIC T/R

Dual, 16-V, 10-MHz, In to V- op amp 8-SOIC 0 to 70

OP AMP, 10MHz, 16V/uS, SOIC-8, FULL REEL

1.9mA(x2 Channels) 19V/¦Ìs 12nV/rtHz@ 5V 10MHz CMOS 57mA 2 2 4.5V ¡À8V,16V 390¦ÌV 3pA 10MHz General Purpose SOIC-8 , 1.75mm

The first members of TI's new Bi Mos general-purpose operational amplifier family are the TLC08x. The BiMOSfamily concept is simple: provide an upgrade path for BiFET users who are moving away from dual-supply to single-supply systems and demand higher ac and dc performance. With performance rated from 4.5 V to 16V across commercial (0oC to 70oC) and an extended industrial temperature range (-40oC to 125oC), Bi Mos suits a wide range of audio, automotive, industrial, and instrumentation applications. Familiar features like offset nulling pins, and new features like MSOP PowerPAD(TM) packages and shutdown modes, enable higher levels of performance in a variety of applications. Developed in TI's patented LBC3 Bi CMOS process, the new Bi Mos amplifiers combine a very high input impedance, low-noise CMOS front end with a high-drive bipolar output stage, thus providing the optimum performance features of both. AC performance improvements over the TL08x BiFET predecessors include abandwidth of 10 MHz (an increase of 300%) and voltage noise of 8.5 nV/\Delta Hz (an improvement of 60%). DC improvements include an ensured VICR that includes ground, a factor of 4 reduction in input offset voltage down to 1.5 mV (maximum) in the standard grade, and a power supply rejection improvement of greater than 40 dB to 130 dB. Added to this list of impressive features is the ability to drive +-50-mA loads comfortably from anultrasmall-footprint MSOP Power Pad package, which positions the TLC08x as the ideal high-performance general-purpose operational amplifier family.