onsemi RFD14N05LSM9A
$ 0.343
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Tendance sur 3 mois : +197%
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| SOURCE | ECAD | MCAD | FICHIERS |
|---|---|---|---|
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 EE Concierge | SymboleEmpreinte |
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Price @ 1000
$ 0.343
$ 0.469
Stock
354,817
390,234
Authorized Distributors
6
6
Mount
Surface Mount
Surface Mount
Case/Package
DPAK
DPAK
Drain to Source Voltage (Vdss)
50 V
50 V
Continuous Drain Current (ID)
14 A
14 A
Threshold Voltage
2 V
2 V
Rds On Max
100 mΩ
100 mΩ
Gate to Source Voltage (Vgs)
10 V
10 V
Power Dissipation
48 W
48 W
Input Capacitance
670 pF
670 pF
Chaîne d'approvisionnement
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date1999-04-01
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
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Descriptions
Descriptions de onsemi RFD14N05LSM9A fournies par ses distributeurs.
N-Channel Logic Level Power MOSFET 50V, 14A, 100mΩ
N-Channel 50 V 0.1 Ohm Surface Mount Logic Level Power Mosfet - TO-252AA
Power Field-Effect Transistor, 14A I(D), 50V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
N CHANNEL MOSFET, 50V, 14mA; Transistor; N CHANNEL MOSFET, 50V, 14mA; Transistor Polarity:N Channel; Continuous Drain Current Id:14mA; Drain Source Voltage Vds:50V; On Resistance Rds(on):100mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2V
These are N-channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers and relay drivers. This performance is accomplished through a special gate oxide design which provides full rated conductance at gate bias in the 3V-5V range, thereby facilitating true on-off power control directly from logic level (5V) integrated circuits. Formerly developmental type TA09870.
Alias du fabricant
onsemi possède plusieurs marques à travers le monde que les distributeurs peuvent utiliser comme noms alternatifs. onsemi peut également être connu sous les noms suivants :
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Historique des stocks
Tendance sur 3 mois : +197%
Modèles CAO
Télécharger le symbole, l’empreinte et le 3D STEP
Pièces de rechange
1 composant disponible
Spécifications techniques
Physical
Case/PackageDPAK
Contact PlatingTin
MountSurface Mount
Number of Pins3
Number of Terminals2
Weight260.37 mg
Technical
Continuous Drain Current (ID)14 A
Current Rating14 A
Drain to Source Breakdown Voltage50 V
Drain to Source Resistance100 mΩ
Drain to Source Voltage (Vdss)50 V
Element ConfigurationSingle
Fall Time16 ns
Gate to Source Voltage (Vgs)10 V
Input Capacitance670 pF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation48 W
Min Breakdown Voltage50 V
Min Operating Temperature-55 °C
Nominal Vgs2 V
Number of Channels1
Number of Elements1
PackagingCut Tape
Power Dissipation48 W
Rds On Max100 mΩ
Resistance100 mΩ
Rise Time24 ns
Schedule B8541290080
Threshold Voltage2 V
Turn-Off Delay Time42 ns
Turn-On Delay Time13 ns
Voltage Rating (DC)50 V
Dimensions
Height2.517 mm
Length6.73 mm
Width6.22 mm
Conformité
Classification environnementale
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Déclarations de conformité