onsemi RFD14N05

Tube Through Hole N-Channel Single Mosfet Transistor 14A Tc 14A 48W 17ns
$ 0.351
Obsolete
Fiche technique

Prix et stock

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DistributorSKUMinPkg
Rochester ElectronicsRFD14N05172
3h
FarnellRFD14N0501
1d
element14 APACRFD14N0501
16h
Worldway ElectronicsRFD14N0517 9077Tube
2h
Fly-Wing TechnologyRFD14N0516 677
1d

Fiches techniques et documents

Téléchargez les fiches techniques et la documentation du fabricant pour onsemi RFD14N05.

IHS

Datasheet8 pagesIl y a 22 ans

Farnell

iiiC

Future Electronics

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Pièces de rechange

Ce composant
Pièces de rechange
onsemiRFD14N05
onsemiRFP14N05L
Price @ 1000
$ 0.351
$ 0.417
Stock
66,875
135,204
Authorized Distributors
3
1
Mount
Through Hole
Through Hole
Case/Package
TO-251-3
TO-220AB
Drain to Source Voltage (Vdss)
50 V
50 V
Continuous Drain Current (ID)
14 A
14 A
Threshold Voltage
4 V
-
Rds On Max
100 mΩ
100 mΩ
Gate to Source Voltage (Vgs)
20 V
10 V
Power Dissipation
48 W
48 W
Input Capacitance
570 pF
670 pF

Chaîne d'approvisionnement

Lifecycle StatusObsolete (Last Updated: 4 months ago)

Pièces détachées

InfineonIRFU024NPBF
MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 0.075Ohm;ID 17A;I-Pak (TO-251AA);PD 45W
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onsemiRFD14N05L
Transistor RFD14N05L Power MOSFET N-Channel 50 Volt 14 Amp TO-251AA
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InfineonIRFU5505PBF
MOSFET, Power;P-Ch;VDSS -55V;RDS(ON) 0.11Ohm;ID -18A;I-Pak (TO-251AA);PD 57W
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onsemiNTD18N06-001
MOSFETs- Power and Small Signal 60V 18A N-Channel No-Cancel/No-Return
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onsemiNTD18N06-1G
Tube Through Hole N-Channel Single Mosfet Transistor 18A Ta 18A 55W 20ns
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onsemiHUFA76407D3
12 A 60 V 0.117 ohm N-CHANNEL Si POWER MOSFET TO-251AA
Détails

Descriptions

Descriptions de onsemi RFD14N05 fournies par ses distributeurs.

Tube Through Hole N-Channel Single Mosfet Transistor 14A Tc 14A 48W 17ns
Fly-Wing Technology
Power Field-Effect Transistor, 14A I(D), 50V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
ComSIT Distribution GmbH
Transistor; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:50V; Continuous Drain Current, Id:14A; On Resistance, Rds(on):0.1ohm; Rds(on) Test Voltage, Vgs:10V; Threshold Voltage, Vgs Typ:4V ;RoHS Compliant: Yes
Newark
MOSFET, N, I-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:14A; Drain Source Voltage Vds:50V; On Resistance Rds(on):100mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:48W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:I-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:TO-251; Current Id Max:14A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Lead Length:9.65mm; Lead Spacing:2.28mm; No. of Transistors:1; Package / Case:IPAK; Power Dissipation Pd:48W; Power Dissipation Pd:48W; Pulse Current Idm:35A; SMD Marking:RFD14N05; Termination Type:Through Hole; Turn Off Time:17ns; Turn On Time:26ns; Voltage Vds Typ:50V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V
element14 APAC

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Farnell
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Rochester Electronics
iiiC

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Alias de numéro de pièce

Ce composant peut être référencé sous ces autres numéros :

  • RFD14N05.