onsemi PZT2907A

Bipolar Junction Transistor (BJT) PNP 60V 600mA 1W SOT-223

PNP SWITCHING TRANSISTOR Power Bipolar Transistor, 0.6A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 4 Pin

Trans GP BJT PNP 60V 0.6A 4-Pin(3+Tab) SOT-223 T/R

PZT2907A Series 60 V CE Breakdown .8 A PNP General Purpose Amplifier - SOT-223

Bipolar Transistor; Transistor Polarity:PNP; Power Dissipation, Pd:1W; DC Current Gain Min (hfe):50; Package/Case:SOT-223; C-E Breakdown Voltage:60V; DC Collector Current:0.8A; Leaded Process Compatible:Yes ;RoHS Compliant: Yes

The PN2907A, MMBT2907A, and PZT2907A are 60 V PNP bipolar transistors designed for use as a general-purpose amplifier or switch in applications that require up to 500 mA. Offered in an ultra-small surface-mount package (SOT-223), the PZT2907A is ideal for spaceconstrained systems. The NPN complementary types are the PN2222A, MMBT2222A, and PZT2222A; respectively.

TRANSISTOR, PNP, SOT-223; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:60V; Transition Frequency Typ ft:200MHz; Power Dissipation Pd:1W; DC Collector Current:800mA; DC Current Gain hFE:300; Transistor Case Style:SOT-223; No. of Pins:4; SVHC:No SVHC (20-Jun-2011); Application Code:GP; Av Current Ic:800mA; Collector Emitter Voltage Vces:-400mV; Continuous Collector Current Ic Max:800mA; Current Ic Continuous a Max:800mA; Current Ic hFE:150mA; Gain Bandwidth ft Min:200MHz; Gain Bandwidth ft Typ:200MHz; Hfe Min:100; No. of Transistors:1; Package / Case:SOT-223; Power Dissipation Pd:1W; Power Dissipation Ptot Max:1W; SMD Marking:PZT2907A; Termination Type:SMD; Voltage Vcbo:60V