onsemi NDS8858H
$ 0.629
Obsolete
Prix et stock
Distributeurs agréés
Distributeurs de solutions de stockage non agréés
Revendeurs non agréés
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Verical | NDS8858H | 9 841 | 446 | |||||||||
| Rochester Electronics | NDS8858H | 11 833 | 20h | |||||||||
| Win Source | WS-NDS8858H | 442 | 125 | 21h | ||||||||
| ICPartonline | NDS8858H | 34 870 | 2d | |||||||||
| Worldway Electronics | NDS8858H | 29 595 | 7 | Tape & Reel | 20h |
Historique des stocks
Tendance sur 3 mois : Restocked
Modèles CAO
Télécharger le symbole, l’empreinte et le 3D STEP
Pièces de rechange
0 composant disponible
Chaîne d'approvisionnement
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date1996-07-01
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2011-12-13
LTD Date2012-06-13
Pièces détachées
Diodes Inc.ZXMN3A06DN8TA
ZXMN3A06 Series Dual 30 V 0.035 Ohm N-Channel Enhancement Mode MOSFET - SOIC-8
InfineonIRF7406PBF
MOSFET, Power;P-Ch;VDSS -30V;RDS(ON) 0.045Ohm;ID -5.8A;SO-8;PD 2.5W;VGS +/-20V
Diodes Inc.DMP3037LSS-13
1.2W(Ta) 20V 2.4V@ 250¦ÌA 19.3nC@ 10 V 1P 30V 32m¦¸@ 7A,10V 5.8A 931pF@15V SOIC-8
Descriptions
Descriptions de onsemi NDS8858H fournies par ses distributeurs.
Trans MOSFET N/P-CH 30V 6.3A/4.8A 8-Pin SOIC N T/R
Tape & Reel (TR) Surface Mount N and P-Channel 2 Mosfet Array 6.3A 4.8A 4.8A 1W 19ns
Small Signal Field-Effect Transistor, 6.3A I(D), 30V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFET; Transistor Type:MOSFET; Transistor Polarity:Dual N/P Channel; Package/Case:8-SOIC; Drain-Source Breakdown Voltage:30V; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes; Mounting Type:Surface Mount ;RoHS Compliant: Yes
These Complementary MOSFET half bridge devices are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. These devices are particularly suited for low voltage half bridge applications or CMOS applications when both gates are connected together.
Alias du fabricant
onsemi possède plusieurs marques à travers le monde que les distributeurs peuvent utiliser comme noms alternatifs. onsemi peut également être connu sous les noms suivants :
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Historique des stocks
Tendance sur 3 mois : Restocked
Modèles CAO
Télécharger le symbole, l’empreinte et le 3D STEP
Pièces de rechange
0 composant disponible
Spécifications techniques
Physical
Case/PackageSOIC
MountSurface Mount
Number of Pins8
Number of Terminals8
Weight230.4 mg
Technical
Continuous Drain Current (ID)6.3 A
Current Rating4.8 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance35 mΩ
Drain to Source Voltage (Vdss)30 V
Fall Time19 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance720 pF
Max Operating Temperature150 °C
Max Power Dissipation2.5 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Number of Elements2
PackagingCut Tape
Power Dissipation2.5 W
Rds On Max35 mΩ
Rise Time20 ns
Turn-Off Delay Time40 ns
Conformité
Classification environnementale
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Déclarations de conformité