onsemi MUN5316DW1T1G

MUN Series 50 V 100 mA 4.7 kOhm NPN/PNP Dual Bias Resistor Transistor - SOT-363
$ 0.049
Production
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DistributorSKUMinPkg
Avnet
2
MUN5316DW1T1G24 00050K
4h
Verical
6
MUN5316DW1T1G599 0839405
Arrow Electronics
2
MUN5316DW1T1G5021
Rochester ElectronicsMUN5316DW1T1G694 808
2h
DigiKey
2
488-MUN5316DW1T1GCT-ND3 1501Cut Tape

Fiches techniques et documents

Téléchargez les fiches techniques et la documentation du fabricant pour onsemi MUN5316DW1T1G.

IHS

Datasheet10 pagesIl y a 10 ans

Electro Sonic

onsemi

Newark

Future Electronics

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Chaîne d'approvisionnement

Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)

Pièces détachées

onsemiMUN5216DW1T1G
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN, Silicon
Détails
onsemiMUN5315DW1T1G
MUN Series 50 V 100 mA 10 kOhm NPN/PNP Dual Bias Resistor Transistor - SOT-363
Détails
onsemiMUN5330DW1T1G
ON SEMI MUN5330DW1T1G DUAL NPN+PNP BIPOLAR TRANSISTOR,0.1 A,50V,6-PIN SOT-363
Détails

Descriptions

Descriptions de onsemi MUN5316DW1T1G fournies par ses distributeurs.

MUN Series 50 V 100 mA 4.7 kOhm NPN/PNP Dual Bias Resistor Transistor - SOT-363
Future Electronics
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN and PNP, Silicon
IHS
250mV@ 1mA,10mA 1 NPN,1 PNP - Pre-Biased (Dual) 385mW 500nA 50V 100mA SC-88-6 2mm*1.25mm*900¦Ìm
UnikeyIC
Trans Digital BJT NPN/PNP 50V 100mA 385mW 6-Pin SC-88 T/R
Verical
Complementary Bipolar Digital Transistor (BRT)
onsemi
BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT;
Farnell
Brt Transistor, 50V, 4.7Kohm, Sc88; Transistor Polarity:Npn And Pnp Complement; Collector Emitter Voltage Max Npn:50V; Collector Emitter Voltage Max Pnp:50V; Continuous Collector Current:100Ma; Base Input Resistor R1:- Rohs Compliant: Yes |Onsemi MUN5316DW1T1G
Newark
The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. These digital transistors are designed to replace a single device and its external resistor bias network. The BRT eliminates these individual components by integrating them into a single device. In the MUN5311DW1T1 series two complementary BRT devices are housed in the SOT-363 package which is ideal for low power surface mount applications where board space is at a premium.
North Star Micro

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Newark
Future Electronics
TME
Rochester Electronics
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