onsemi MUN5114T1G
$ 0.04
Production
Prix et stock
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Distributeurs de solutions de stockage non agréés
Revendeurs non agréés
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Avnet | MUN5114T1G | 330 000 | 3K | 12h | ||||||||
| Newark | MUN5114T1G | 9 609 | 5 | Cut Tape | ||||||||
| Verical | MUN5114T1G | 195 000 | 20135 | |||||||||
| Arrow Electronics | MUN5114T1G | 194 | 1 | |||||||||
| Rochester Electronics | MUN5114T1G | 238 161 | 10h |
Historique des stocks
Tendance sur 3 mois : +5.69%
Modèles CAO
Télécharger le symbole, l’empreinte et le 3D STEP
Pièces de rechange
1 composant disponible
Fiches techniques et documents
Téléchargez les fiches techniques et la documentation du fabricant pour onsemi MUN5114T1G.
Modèles CAO
Téléchargez les symboles onsemi MUN5114T1G, les empreintes et les modèles STEP 3D de nos partenaires de confiance.
| SOURCE | ECAD | MCAD | FICHIERS |
|---|---|---|---|
 EE Concierge | SymboleEmpreinte | ||
 Ultra Librarian | SymboleEmpreinte | Télécharger |
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Price @ 1000
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Stock
2,104,528
1,610,581
1,610,581
Authorized Distributors
6
3
3
Mount
-
-
-
Case/Package
SC
SOT-323-3
SOT-323-3
Polarity
PNP
PNP
PNP
Collector Emitter Breakdown Voltage
50 V
50 V
50 V
Max Collector Current
100 mA
100 mA
100 mA
Transition Frequency
-
-
-
Collector Emitter Saturation Voltage
-
250 mV
250 mV
hFE Min
80
80
80
Power Dissipation
202 mW
310 mW
310 mW
Chaîne d'approvisionnement
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1993-01-01
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
Pièces détachées
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ROHMDTC143TUAT106
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Descriptions
Descriptions de onsemi MUN5114T1G fournies par ses distributeurs.
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon
MUN Series 50 V 100 mA 10 kOhm PNP Silicon Bias Resistor Transistor - SOT-323
PNP Bipolar Digital Transistor (BRT)
250mV@ 300¦ÌA,10mA PNP - Pre-Biased 310mW 500nA 50V 100mA SOT-323 2.1mm*1.24mm*850¦Ìm
BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT;
Trans Digital BJT PNP 50V 100mA 310mW 3-Pin SC-70 T/R
Transistor Polarity:Single PNP; Collector Emitter Voltage Max NPN:-; Collector Emitter Voltage Max PNP:50V; Continuous Collector Current:100mA; Base Input Resistor R1:10kohm; Base Emitter Resistor R2:47kohm; No. of Pins:3 Pin RoHS Compliant: Yes
This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space. The device is housed in the SC-70/SOT-323 package which is designed for low power surface mount applications.
Alias du fabricant
onsemi possède plusieurs marques à travers le monde que les distributeurs peuvent utiliser comme noms alternatifs. onsemi peut également être connu sous les noms suivants :
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Historique des stocks
Tendance sur 3 mois : +5.69%
Modèles CAO
Télécharger le symbole, l’empreinte et le 3D STEP
Pièces de rechange
1 composant disponible
Spécifications techniques
Physical
Case/PackageSC
Number of Pins3
Number of Terminals3
Technical
Collector Emitter Breakdown Voltage50 V
Collector Emitter Voltage (VCEO)50 V
Continuous Collector Current100 mA
Current Rating-100 mA
Element ConfigurationSingle
hFE Min80
Max Breakdown Voltage50 V
Max Collector Current100 mA
Max Operating Temperature150 °C
Max Output Current100 mA
Max Power Dissipation150 mW
Min Operating Temperature-55 °C
Number of Elements1
Operating Supply Voltage50 V
PackagingTape and Reel
PolarityPNP
Power Dissipation202 mW
Schedule B8541210080
Voltage Rating (DC)-50 V
Fiches techniques et documents
Téléchargez les fiches techniques et la documentation du fabricant pour onsemi MUN5114T1G.
Conformité
Classification environnementale
China RoHSCompliant
Halogen FreeHalogen Free
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Déclarations de conformité