12 AMPS, 60 VOLTS N-CHANNEL DPAK-3 POWER MOSFET Power Field-Effect Transistor, 12A I(D), 60V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

ComSIT Distribution GmbH

MOSFET, N, SMD, TO-252; Transistor Polarity:N Channel; Continuous Drain Current Id:12A; Drain Source Voltage Vds:60V; On Resistance Rds(on):180mohm; Rds(on) Test Voltage Vgs:5V; Threshold Voltage Vgs Typ:1.5V; Power Dissipation Pd:48W; Transistor Case Style:TO-252; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:12A; Package / Case:DPAK; Power Dissipation Pd:48W; Termination Type:SMD; Voltage Vds Typ:60V; Voltage Vgs Max:1.5V; Voltage Vgs Rds on Measurement:5V

element14 APAC

This N-Channel Logic Level MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency.

Fairchild Semiconductor

Images

Rochester Electronics

Alias du fabricant

onsemi possède plusieurs marques à travers le monde que les distributeurs peuvent utiliser comme noms alternatifs. onsemi peut également être connu sous les noms suivants :

ON Semiconductor
ONS
ONSEMICON
ON SEM
ON SEMICONDUCTO
ON SEMICONDUCTORS
ONSEMIC
ON Semicondu
OSC
ONSE
ON SEMICOND
ON Semiconductor / Fairchild
SCG
ON Semiconductor Cor
ON SEMICO
ONSM
ON SEMICONDUCTOR CORP
onsemi / Fairchild
MOT/ON SEMI
Fairchild/ONSemiconductor
ON Semiconductor Corporation
ON4
ON Semi - ON Semiconductor
ON SEMICONDUCT
ON-SEMI SCG
ON Semiconductor Inc.
onsemiconductor
On Semiconductor Ltd

Alias de numéro de pièce

Ce composant peut être référencé sous ces autres numéros :

MTD3055VL.
MTD3055VL..

Historique des stocks

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Modèles CAO

Télécharger le symbole, l’empreinte et le 3D STEP

Pièces de rechange

0 composant disponible

Spécifications techniques

Physical

Case/PackageTO-252

Contact PlatingTin

MountSurface Mount

Number of Pins3

Number of Terminals2

Weight260.37 mg

Technical

Continuous Drain Current (ID)12 A

Current Rating12 A

Drain to Source Breakdown Voltage60 V

Drain to Source Resistance180 mΩ

Drain to Source Voltage (Vdss)60 V

Dual Supply Voltage60 V

Element ConfigurationSingle

Fall Time90 ns

Gate to Source Voltage (Vgs)15 V

Input Capacitance570 pF

Max Junction Temperature (Tj)175 °C

Max Operating Temperature175 °C

Max Power Dissipation48 W

Min Breakdown Voltage60 V

Min Operating Temperature-55 °C

Nominal Vgs1.5 V

Number of Channels1

Number of Elements1

Power Dissipation48 W

Rds On Max180 mΩ

Resistance107 mΩ

Rise Time190 ns

Schedule B8541290080

TerminationSMD/SMT

Threshold Voltage1.5 V

Turn-Off Delay Time14 ns

Turn-On Delay Time9 ns

Voltage Rating (DC)60 V

Dimensions

Height2.517 mm

Length6.73 mm

Width6.22 mm

Fiches techniques et documents

Téléchargez les fiches techniques et la documentation du fabricant pour onsemi MTD3055VL.

Upverter

Technical Drawing1 pageIl y a 3 ans

Datasheet8 pagesIl y a 19 ans

TME

IHS

Farnell

Fairchild Semiconductor

Conformité

Classification environnementale

China RoHSNon-Compliant

Lead FreeLead Free

Radiation HardeningNo

REACH SVHCNo

RoHSCompliant

Déclarations de conformité

Rohs Statement3 pagesIl y a 5 ans

Reach Statement3 pagesIl y a 12 ans

Materials Sheet3 pagesIl y a 12 ans

Reach Statement3 pagesIl y a 11 ans

Materials Sheet3 pagesIl y a 11 ans

Reach Statement8 pagesIl y a 11 ans

Rohs Statement1 pageIl y a 13 ans

Rohs Statement1 pageIl y a 14 ans

Reach Statement2 pagesIl y a 13 ans

Rohs StatementN/AN/A