onsemi MOCD217M
$ 0.292
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Distributeurs de solutions de stockage non agréés
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Historique des stocks
Tendance sur 3 mois : +24.72%
Modèles CAO
Télécharger le symbole, l’empreinte et le 3D STEP
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0 composant disponible
Modèles CAO
Téléchargez les symboles onsemi MOCD217M, les empreintes et les modèles STEP 3D de nos partenaires de confiance.
| SOURCE | ECAD | MCAD | FICHIERS |
|---|---|---|---|
 Component Search Engine | SymboleEmpreinte | 3D | Télécharger |
 EE Concierge | SymboleEmpreinte | ||
 Ultra Librarian | SymboleEmpreinte | Télécharger |
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Chaîne d'approvisionnement
Country of OriginThailand
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.40.80.00
Introduction Date2002-04-01
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
Descriptions
Descriptions de onsemi MOCD217M fournies par ses distributeurs.
Optocoupler, Transistor Output, 2 Channel, SOIC, 8 Pins, 60 mA, 2.5 kV, 100 %
Optocoupler DC-IN 2-CH Transistor DC-OUT 8-Pin SOIC N Box
Avnet Japan
8-pin SOIC Dual-Channel Phototransistor Output Optocoupler
SOIC8 SMT Dual Channel 30 V 2500 Vrms Phototransistor Optocoupler
OPTOCOUPLER, PHOTOTRANSISTOR, 2500VRMS;; OPTOCOUPLER, PHOTOTRANSISTOR, 2500VRMS; No. of Channels:2 Channel; Optocoupler Case Style:SOIC; No. of Pins:8Pins; Forward Current If Max:60mA; Isolation Voltage:2.5kV; CTR Min:10
Optocoupler; No. of Channels:2; Optocoupler Output Type:Transistor; Package/Case:8-DIP; Leaded Process Compatible:No; Mounting Type:Through Hole; No. of Pins:8; Peak Reflow Compatible (260 C):No; Propagation Delay:7.5µs ;RoHS Compliant: No
The MOCD217M device consists of two gallium arsenide infrared emitting diodes optically coupled to two monolithic silicon phototransistor detectors, in a surface mountable, small outline plastic package. It is ideally suited for high density applications and eliminates the need for through-the-board mounting.
OPTOCOUPLER, SMD, DUAL; No. of Channels:2; Voltage, Isolation:3000V; Output Type:Transistor; Input Current:60mA; Voltage, Output Max:30V; Case Style:SOIC-8; Operating Temperature Range:-40°C to +100°C; Approval Bodies:UL; Current, If AV:1mA; External Depth:5.84mm; External Length / Height:3.18mm; No. of Pins:8; Optocoupler Type:Transistor Output; Termination Type:SMD; Time, Fall:5.7µs; Time, Rise:7.5µs; Voltage, Test:3000V; Width, External:6.1mm; Ratio, CTR Min:100%
Collector-Emitter Voltage (VCEO) Max. V = 30 / Collector Current Max. mA = 150 / Power Dissipation (Pd) mW = 240 / Reverse Voltage (Vr) V = 6 / Package Type = SOIC-8 / Collector-Emitter Saturation Voltage Max. mV = 400 / Emitter−Collector Voltage (VECO) Max. V = 7 / Forward Voltage (Vf) Max. V = 1.3 / Output Type = Phototransistor / Isolation Voltage kV = 2.5 / Forward Current (If) Max. mA = 60 / Current Transfer Ratio (CTR) Min. % = 100 / Operating Temperature Max. °C = 100 / Operating Temperature Min. °C = -40 / Channels = 2
Alias du fabricant
onsemi possède plusieurs marques à travers le monde que les distributeurs peuvent utiliser comme noms alternatifs. onsemi peut également être connu sous les noms suivants :
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Historique des stocks
Tendance sur 3 mois : +24.72%
Modèles CAO
Télécharger le symbole, l’empreinte et le 3D STEP
Pièces de rechange
0 composant disponible
Spécifications techniques
Physical
Case/PackageSOIC
MountSurface Mount
Number of Pins8
Weight252 mg
Technical
Ambient Temperature Range High100 °C
Collector Emitter Breakdown Voltage30 V
Collector Emitter Saturation Voltage400 mV
Collector Emitter Voltage (VCEO)30 V
Current Transfer Ratio100 %
Dark Current50 nA
Forward Current60 mA
Forward Voltage1.3 V
Input Current10 mA
Isolation Voltage2500 Vrms
Max Collector Current150 mA
Max Input Current60 mA
Max Junction Temperature (Tj)125 °C
Max Operating Temperature100 °C
Max Output Voltage30 V
Max Power Dissipation150 mW
Min Operating Temperature-40 °C
Number of Channels2
Number of Circuits2
Number of Elements2
Output Current per Channel150 mA
Output Voltage30 V
Power Dissipation240 mW
Reverse Breakdown Voltage6 V
Reverse Voltage6 V
Reverse Voltage (DC)6 V
Rise Time7.5 µs
Schedule B8541408000
Test Voltage3 kV
Turn-Off Delay Time5.7 µs
Turn-On Delay Time7.5 µs
Voltage Rating (DC)30 V
Dimensions
Height3.63 mm
Length5.13 mm
Conformité
Classification environnementale
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Déclarations de conformité