onsemi MMUN2116LT1G
$ 0.037
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Tendance sur 3 mois : -1.58%
Modèles CAO
Télécharger le symbole, l’empreinte et le 3D STEP
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Téléchargez les symboles onsemi MMUN2116LT1G, les empreintes et les modèles STEP 3D de nos partenaires de confiance.
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|---|---|---|---|
 Component Search Engine | SymboleEmpreinte | 3D | Télécharger |
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Price @ 1000
$ 0.037
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Stock
1,178,021
5,588,249
5,588,249
Authorized Distributors
6
6
6
Mount
-
-
-
Case/Package
SOT-23-3
SOT-23-3
SOT-23-3
Polarity
PNP
PNP
PNP
Collector Emitter Breakdown Voltage
50 V
50 V
50 V
Max Collector Current
100 mA
100 mA
100 mA
Transition Frequency
-
-
-
Collector Emitter Saturation Voltage
250 mV
250 mV
250 mV
hFE Min
160
160
160
Power Dissipation
246 mW
246 mW
246 mW
Chaîne d'approvisionnement
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1994-10-01
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
Pièces détachées
onsemiMMUN2115LT1G
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, TO-236AB
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Bipolar Pre-Biased / Digital Transistor, Single PNP, 50 V, 100 mA, 10 kohm, 10 kohm
Diodes Inc.DDTA114YCA-7-F
Small Signal Bipolar Transistor, 0.07A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon
Diodes Inc.DDTA113ZCA-7-F
DDTA Series 200 mW 1 KO / 10 KO PNP Pre-Braised Small Signal Transistor - SOT-23
Descriptions
Descriptions de onsemi MMUN2116LT1G fournies par ses distributeurs.
ON SEMI MMUN2116LT1G PNP BIPOLAR TRANSISTOR, 0.1 A, 50 V, 3-PIN SOT-23
PNP DIGITAL TRANSISTOR WITH MONOLITHIC BIAS RESISTOR NETWORK Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, TO-236AB
250mV@ 1mA,10mA PNP - Pre-Biased 400mW 500nA 50V 100mA SOT-23-3,TO-236 2.9mm*1.3mm*940¦Ìm
MMUN2116LT series 50V 100mA 3-Pin SOT-23 Trans Digital BJT PNP
PNP Bipolar Digital Transistor (BRT)
PNP - Pre-Biased 246mW 100mA 50V SOT-23(SOT-23-3) Digital Transistors ROHS
BIAS RESISTOR TRANSISTOR; COLLECTOR EMIT; Digital Transistor Polarity: Single PNP; Collector Emitter Voltage V(br)ceo: 50V; Continuous Collector Current Ic: 100mA; Base Input Resistor R1: 4.7kohm; Base-Emitter Resistor R2: -;
Bias Resistor Transistor; Tensión Colector Emisor V(Br)Ceo:50V; Intensidad De Collector Continua Ic:100Ma; Resitencia Básica De Entrada R1:4.7Kohm; Resistor R2 Base-Emisor:-; Ratio De La Resistencia, R1/R2:-; Núm. De Contactos:3 |Onsemi MMUN2116LT1G
This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space. The device is housed in the SOT-23 package whi designed for low power surface mount applications.
Alias du fabricant
onsemi possède plusieurs marques à travers le monde que les distributeurs peuvent utiliser comme noms alternatifs. onsemi peut également être connu sous les noms suivants :
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Historique des stocks
Tendance sur 3 mois : -1.58%
Modèles CAO
Télécharger le symbole, l’empreinte et le 3D STEP
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1 composant disponible
Spécifications techniques
Physical
Case/PackageSOT-23-3
Contact PlatingTin
Number of Pins3
Number of Terminals3
Technical
Collector Base Voltage (VCBO)50 V
Collector Emitter Breakdown Voltage50 V
Collector Emitter Saturation Voltage250 mV
Collector Emitter Voltage (VCEO)50 V
Continuous Collector Current100 mA
Current Rating-100 mA
Element ConfigurationSingle
Emitter Base Voltage (VEBO)6 V
hFE Min160
Max Breakdown Voltage50 V
Max Collector Current100 mA
Max Frequency10 kHz
Max Operating Temperature150 °C
Max Power Dissipation400 mW
Min Operating Temperature-55 °C
Number of Elements1
PackagingTape and Reel
PolarityPNP
Power Dissipation246 mW
Schedule B8541210080
Voltage Rating (DC)-50 V
Dimensions
Height1.01 mm
Length3.04 mm
Width1.4 mm
Conformité
Classification environnementale
China RoHSCompliant
Halogen FreeHalogen Free
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Déclarations de conformité