onsemi HGTG12N60A4

Trans IGBT Chip N-CH 600V 54A 3-Pin(3+Tab) TO-247 Rail
Obsolete
Page du fabricantFiche technique

Prix et stock

Voir tous les prix
DistributorSKUMinPkg
NewarkHGTG12N60A40300
AvnetHGTG12N60A40300
7h
Win SourceWS-HGTG12N60A42 0008
6h
Worldway ElectronicsHGTG12N60A416 8687Tube
1d
AnlinkdaHGTG12N60A429 863
1d

Fiches techniques et documents

Téléchargez les fiches techniques et la documentation du fabricant pour onsemi HGTG12N60A4.

IHS

Datasheet0 pageIl y a 0 an

Newark

Fairchild Semiconductor

Chaîne d'approvisionnement

Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date1999-08-09
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2012-02-23
LTD Date2012-08-23

Pièces détachées

STMicroelectronicsSTGW20H60DF
Trans IGBT Chip N-CH 600V 40A 167000mW 3-Pin(3+Tab) TO-247 Tube
Détails
STMicroelectronicsSTGW30NC60WD
Transistor IGBT Chip N-Channel 600 Volt 60A 3-Pin(3+Tab) TO-247
Détails
STMicroelectronicsSTGW20V60DF
Trench gate field-stop IGBT, V series 600 V, 20 A very high speed
Détails
onsemiHGTG20N60B3
HGTG20N60B3 Series 600 V 40 A Flange Mount UFS N-Channel IGBT-TO-247
Détails
onsemiHGTG20N60A4
HGTG20N60A4 Series 600 V 70 A Flange Mount SMPS N-Channel IGBT-TO-247
Détails
onsemiNGTB35N60FL2WG
Trans IGBT Chip N-CH 600V 70A 300000mW 3-Pin(3+Tab) TO-247 Tube
Détails

Descriptions

Descriptions de onsemi HGTG12N60A4 fournies par ses distributeurs.

Trans IGBT Chip N-CH 600V 54A 3-Pin(3+Tab) TO-247 Rail
Verical
600V, SMPS Series N-Channel IGBTs | IGBT 600V 54A 167W TO247
Win Source
Insulated Gate Bipolar Transistor, 54A I(C), 600V V(BR)CES, N-Channel, TO-247
IHS
Single Igbt, 600V, 54A; Corriente De Colector Dc:54A; Tensión De Saturación Colector-Emisor Vce(On):2V; Disipación De Potencia Pd:167W; Tensión Colector Emisor V(Br)Ceo:600V; Núm. De Contactos:3; Temperatura De Trabajo Máx.:150°C |Onsemi HGTG12N60A4
Newark
The HGTP12N60A4, HGTG12N60A4 and HGT1S12N60A4S9A are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25°C and 150°C. This IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. This device has been optimized for high frequency switch mode power supplies.
Fairchild Semiconductor

Images

Augswan
Newark
Rochester Electronics
UTSource

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