onsemi H11AG1M
$ 0.525
Production
Historique des stocks
Tendance sur 3 mois : -43.76%
Modèles CAO
Télécharger le symbole, l’empreinte et le 3D STEP
Pièces de rechange
0 composant disponible
Chaîne d'approvisionnement
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.40.80.00
Introduction Date2007-06-08
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
Descriptions
Descriptions de onsemi H11AG1M fournies par ses distributeurs.
6-PIN DIP PHOTOTRANSISTOR OPTOCOUPLER Transistor Output Optocoupler, 1-Element, 7500V Isolation
Single Channel 4170 Vrms Through Hole Phototransistor Optocoupler - DIP-6
The H11AG1M series consists of a Gallium-Aluminum-Arsenide IRED emitting diode coupled with a silicon phototransistor in a dual in-line package. This device provides the unique feature of the high current transfer ratio at both low output voltage and low input current. This makes it ideal for use in low power logic circuits, telecommunications equipment and portable electronics isolation applications
Alias du fabricant
onsemi possède plusieurs marques à travers le monde que les distributeurs peuvent utiliser comme noms alternatifs. onsemi peut également être connu sous les noms suivants :
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Historique des stocks
Tendance sur 3 mois : -43.76%
Modèles CAO
Télécharger le symbole, l’empreinte et le 3D STEP
Pièces de rechange
0 composant disponible
Spécifications techniques
Physical
Case/PackageDIP
Contact PlatingTin
MountThrough Hole
Number of Pins6
Weight855 mg
Technical
Collector Emitter Breakdown Voltage30 V
Collector Emitter Saturation Voltage400 mV
Collector Emitter Voltage (VCEO)400 mV
Current Transfer Ratio300 %
Dark Current10 µA
Fall Time5 µs
Forward Current50 mA
Forward Voltage1.5 V
Isolation Voltage7500 Vrms
Max Collector Current50 mA
Max Input Current50 mA
Max Operating Temperature100 °C
Max Output Voltage30 V
Max Power Dissipation260 mW
Min Operating Temperature-40 °C
Number of Channels1
Number of Elements1
Output Current per Channel50 mA
PackagingBulk
Power Dissipation260 mW
Reverse Breakdown Voltage6 V
Rise Time5 µs
Schedule B8541408000
Conformité
Classification environnementale
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Déclarations de conformité