These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for highefficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.

Fairchild Semiconductor

Alias du fabricant

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Modèles CAO

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Pièces de rechange

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Spécifications techniques

Physical

Case/PackageTO-220-3

MountThrough Hole

Number of Pins3

Number of Terminals3

Weight2.27 g

Technical

Continuous Drain Current (ID)13 A

Drain to Source Breakdown Voltage500 V

Drain to Source Resistance480 mΩ

Drain to Source Voltage (Vdss)500 V

Element ConfigurationSingle

Fall Time100 ns

Gate to Source Voltage (Vgs)30 V

Input Capacitance2.055 nF

Max Operating Temperature150 °C

Max Power Dissipation48 W

Min Breakdown Voltage500 V

Min Operating Temperature-55 °C

Number of Elements1

Power Dissipation48 W

Rds On Max480 mΩ

Rise Time100 ns

Turn-Off Delay Time130 ns

Fiches techniques et documents

Téléchargez les fiches techniques et la documentation du fabricant pour onsemi FQPF13N50CT.

onsemi

Datasheet10 pagesIl y a 12 ans

Datasheet0 pageIl y a 0 an

IHS

Fairchild Semiconductor

Mouser

Conformité

Classification environnementale

RoHSCompliant

Déclarations de conformité

Reach Statement8 pagesIl y a 11 ans

Rohs Statement1 pageIl y a 13 ans

Rohs Statement1 pageIl y a 14 ans

Reach Statement2 pagesIl y a 13 ans

Rohs StatementN/AN/A