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onsemi FQD19N10TM

MOSFET Transistor, N Channel, 15.6 A, 100 V, 0.078 ohm, 10 V, 4 V
EOL
Fiche technique
Page du fabricant

Prix et stock

Voir tous les prix
Distributeur
SKU
Minimum
Emballage
Prix de gros
Weyland Electronics Group Pte. Ltd.
FQD19N10TM
1 244
1
Tape & Reel
USD
1,495
1,495
1,495
1,495
1,495
13h
Win Source
WS-FQD19N10TM
6 460
45
USD
1,020
0,829
0,829
14h
Worldway Electronics
FQD19N10TM
20 509
7
USD
0,362
0,355
0,341
0,334
13h
Easev
FQD19N10TM
2 638
USD
0,426
0,426
0,405
0,371
0,307
>1wk
Aztech
FQD19N10TM
245
USD
10,750
10,750
10,750
10,750
10,750
10h

Fiches techniques et documents

Téléchargez les fiches techniques et la documentation du fabricant pour onsemi FQD19N10TM.

IHS

Datasheet8 pagesIl y a 12 ans
Datasheet0 pageIl y a 0 an

onsemi

Fairchild Semiconductor

element14 APAC

DigiKey

Chaîne d'approvisionnement

Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2000-09-19
Lifecycle StatusEOL (Last Updated: 2 days ago)
LTB Date2022-12-30
LTD Date2023-06-30
Manufacturer Lifecycle StatusLAST SHIPMENTS (Last Updated: 2 days ago)

Pièces détachées

onsemiFQD19N10LTM
N-Channel Power MOSFET, Logic Level, QFET®, 100 V, 15.6 A, 100 mΩ, DPAK
Détails
onsemiFQD13N10TM
N-Channel Power MOSFET, QFET®, 100 V, 10 A, 180 mΩ, DPAK
Détails
VishayIRFR110PBF
Transistor: N-MOSFET; unipolar; 100V; 4.3A; 0.54ohm; 25W; -55+150 deg.C; SMD; TO252(DPAK)
Détails
VishayIRFR110TRPBF
Single N-Channel 100 V 0.54 Ohms Surface Mount Power Mosfet - TO-252
Détails
VishayIRFR120PBF
Single N-Channel 100 V 0.27 Ohms Surface Mount Power Mosfet - TO-252
Détails
onsemiFDD850N10L
PowerTrench® MOSFET, N-Channel, 100V, 15.7A, 75mΩ
Détails

Descriptions

Descriptions de onsemi FQD19N10TM fournies par ses distributeurs.

MOSFET Transistor, N Channel, 15.6 A, 100 V, 0.078 ohm, 10 V, 4 V
Newark
N-Channel Power MOSFET, QFET®, 100 V, 15.6 A, 63 mΩ, DPAK
onsemi
N-Channel 100 V 0.1 Ohm Surface Mount Mosfet - TO-252-3
Future Electronics
Power Field-Effect Transistor, 15.6A I(D), 100V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
IHS
MOSFET, N-CH, 100V, 15.6A, TO-252AA-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 15.6A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.078ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs:
Farnell
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.
Fairchild Semiconductor

Images

element14 APAC
TME
RS
Conrad
Future Electronics
Rochester Electronics

Alias du fabricant

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  • OSC
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  • ON SEMICOND
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  • ON Semiconductor Cor
  • ON SEMICO
  • ONSM
  • onsemi / Fairchild
  • ON SEMICONDUCTOR CORP
  • MOT/ON SEMI
  • Fairchild/ONSemiconductor
  • ON Semiconductor Corporation
  • ON4
  • ON Semi - ON Semiconductor
  • ON SEMICONDUCT
  • ON-SEMI SCG
  • ON Semiconductor Inc.
  • onsemiconductor
  • On Semiconductor Ltd