onsemi FQB33N10TM
EOL
Prix et stock
Distributeurs agréés
Distributeurs de solutions de stockage non agréés
Revendeurs non agréés
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Farnell | FQB33N10TM | 0 | 1 | Cut Tape | 1d | |||||||
| element14 APAC | FQB33N10TM | 0 | 1 | Cut Tape | 20h | |||||||
| Weyland Electronics Group Pte. Ltd. | FQB33N10TM | 5 161 | 1 | Tape & Reel | 10h | |||||||
| Win Source | WS-FQB33N10TM | 3 200 | 4 | 8h | ||||||||
| Worldway Electronics | FQB33N10TM | 12 387 | 7 | Tape & Reel | 7h |
Modèles CAO
Télécharger le symbole, l’empreinte et le 3D STEP
Pièces de rechange
0 composant disponible
Fiches techniques et documents
Téléchargez les fiches techniques et la documentation du fabricant pour onsemi FQB33N10TM.
Modèles CAO
Téléchargez les symboles onsemi FQB33N10TM, les empreintes et les modèles STEP 3D de nos partenaires de confiance.
| SOURCE | ECAD | MCAD | FICHIERS |
|---|---|---|---|
 EE Concierge | SymboleEmpreinte |
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Chaîne d'approvisionnement
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2000-05-24
Lifecycle StatusEOL (Last Updated: 3 days ago)
LTB Date2022-06-21
LTD Date2022-12-21
Manufacturer Lifecycle StatusLAST SHIPMENTS (Last Updated: 3 days ago)
Pièces détachées
STMicroelectronicsSTB30NF10T4
N-CHANNEL 100V 0.038 OHM 35A D2PAK LOW GATE CHARGE STripFET II MOSFET
InfineonIRF540NSPBF
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 44Milliohms;ID 33A;D2Pak;PD 130W;VGS +/-20
InfineonIRF540NSTRLPBF
Transistor MOSFET N Channel 100 Volt 33 Amp 3-Pin 2+ Tab D2pak Tape And Reel
InfineonIRF1310NSPBF
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 0.036Ohm;ID 42A;D2Pak;PD 160W;VGS +/-20V
Descriptions
Descriptions de onsemi FQB33N10TM fournies par ses distributeurs.
Transistor MOSFET N Channel 100 Volt 33 Amp 3-Pin 2+ Tab D2pak Tape And Reel
N-Channel Power MOSFET, QFET®, 100 V, 33 A, 52 mΩ, D2PAK
N-Channel 100 V 52 mOhm Surface Mount Mosfet - D2PAK-3
Trans MOSFET N-CH 100V 33A 3-Pin(2+Tab) D2PAK T/R
Power Field-Effect Transistor, 33A I(D), 100V, 0.052ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
Transistor; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:100V; Continuous Drain Current, Id:33A; On Resistance, Rds(on):0.052ohm; Rds(on) Test Voltage, Vgs:10V; Threshold Voltage, Vgs Typ:4V ;RoHS Compliant: Yes
MOSFET, N TO-263; Transistor Polarity:N Channel; Continuous Drain Current Id:30A; Drain Source Voltage Vds:100V; On Resistance Rds(on):40mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:127W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:D2-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:33A; Package / Case:D2-PAK; Power Dissipation Pd:127W; Power Dissipation Pd:127W; Pulse Current Idm:132A; Rate of Voltage Change dv / dt:6V/ns; Termination Type:SMD; Voltage Vds Typ:100V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V; Voltage Vgs th Min:2V
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.
Alias du fabricant
onsemi possède plusieurs marques à travers le monde que les distributeurs peuvent utiliser comme noms alternatifs. onsemi peut également être connu sous les noms suivants :
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Modèles CAO
Télécharger le symbole, l’empreinte et le 3D STEP
Pièces de rechange
0 composant disponible
Spécifications techniques
Physical
Case/PackageD2PAK
Contact PlatingTin
MountSurface Mount
Number of Pins3
Number of Terminals2
Weight1.31247 g
Technical
Continuous Drain Current (ID)33 A
Current Rating33 A
Drain to Source Breakdown Voltage100 V
Drain to Source Resistance52 mΩ
Drain to Source Voltage (Vdss)100 V
Element ConfigurationSingle
Fall Time110 ns
Gate to Source Voltage (Vgs)25 V
Input Capacitance1.5 nF
Max Operating Temperature175 °C
Max Power Dissipation127 W
Min Breakdown Voltage100 V
Min Operating Temperature-55 °C
Number of Elements1
PackagingCut Tape
Power Dissipation3.75 W
Rds On Max52 mΩ
Resistance52 MΩ
Rise Time195 ns
Schedule B8541290080
Threshold Voltage4 V
Turn-Off Delay Time80 ns
Turn-On Delay Time15 ns
Voltage Rating (DC)100 V
Dimensions
Height4.83 mm
Length10.67 mm
Width9.65 mm
Fiches techniques et documents
Téléchargez les fiches techniques et la documentation du fabricant pour onsemi FQB33N10TM.
Conformité
Classification environnementale
China RoHSNon-Compliant
Lead FreeLead Free
REACH SVHCNo
RoHSCompliant
Déclarations de conformité