onsemi FFP08S60SNTU

Rectifier Diode, 1 Phase, 1 Element, 8A, 600V V(RRM), Silicon, TO-220AC
$ 1.026
Obsolete
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onsemi

Fairchild Semiconductor

Newark

Farnell

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Chaîne d'approvisionnement

Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.10.00.80
Introduction Date2008-05-12
Lifecycle StatusObsolete (Last Updated: 1 day ago)
LTB Date2021-07-29
LTD Date2022-01-29
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 1 day ago)

Pièces détachées

Diode Ultra Fast Recovery Rectifier 600V 16A 3-Pin (3+Tab) TO-220AB Rail
Rectifier Diode, 1 Phase, 1 Element, 4A, 600V V(RRM), Silicon, TO-220AC
Rectifier Diode, 1 Phase, 2 Element, 10A, 200V V(RRM), Silicon, TO-220AB
Rectifier Diode, 1 Phase, 1 Element, 15A, 600V V(RRM), Silicon, TO-220AC
Rectifier Diode, 1 Phase, 2 Element, 15A, 200V V(RRM), Silicon, TO-220AB, TO-220, 3 PIN
Rectifier Diode, 1 Phase, 2 Element, 20A, 600V V(RRM), Silicon, TO-220AB

Descriptions

Descriptions de onsemi FFP08S60SNTU fournies par ses distributeurs.

Rectifier Diode, 1 Phase, 1 Element, 8A, 600V V(RRM), Silicon, TO-220AC
Diode Switching 600V 8A 2-Pin(2+Tab) TO-220 Rail
DIODE, RECTIFIER, 600V, 8A, TO-220; Diode Type:Ultrafast; Diode Configuration:Single; Repetitive Reverse Voltage Vrrm Max:600V; Forward Current If(AV):8A; Forward Voltage VF Max:3.4V; Reverse Recovery Time trr Max:25ns; Forward Surge Current Ifsm Max:60A; Operating Temperature Range:-65°C to +150°C; Diode Case Style:TO-220; No. of Pins:2; MSL:MSL 1 - Unlimited
The FFP08S60SN is a STEALTH™ II diode with soft recovery characteristics. It is silicon nitride passivated ion-implanted epitaxial planar construction. This device is intended for use as freewheeling of boost diode in switching power supplies and other power swithching applications. Their low stored charge and hyperfast soft recovery minimize ringing and electrical noise in many power switching circuits reducing power loss in the switching transistors.

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