Descriptions de onsemi FDY4001CZ fournies par ses distributeurs.
Small Signal Field-Effect Transistor, 0.2A I(D), 20V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFET, DUAL, NP, SC89-6; Transistor Polarity:N and P Channel; Continuous Drain Current Id:-; Drain Source Voltage Vds:20V; On Resistance Rds(on):5ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:1V; Power Dissi
MOSFET, DUAL, NP, SC89-6; Transistor Type:MOSFET; Transistor Polarity:N/P; Voltage, Vds Typ:20V; Voltage, Vgs Rds on Measurement:4.5V; Voltage, Vgs th Typ:1V; Case Style:SC-89; Termination Type:SMD; Current, Id Cont N Channel:0.2A; Current, Id Cont P Channel:0.15A; Current, Idm Pulse:1A; Pin Configuration:S2(4),G2(5),D1(6),D2(3),G1(2), S1(1); Power, Pd:0.625W; Resistance, Rds on N Channel 1:5ohm; Resistance, Rds on, P Channel 2:8ohm; Typ Capacitance Ciss:100pF; Voltage, Rds Measurement:4.5V; Voltage, Vds Max:20V; Voltage, Vgs Max:8V; Voltage, Vgs th Max:1.5V; Voltage, Vgs th Min:0.6V