onsemi FDV301N
$ 0.064
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Historique des stocks
Tendance sur 3 mois : -10.37%
Modèles CAO
Télécharger le symbole, l’empreinte et le 3D STEP
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0 composant disponible
Modèles CAO
Téléchargez les symboles onsemi FDV301N, les empreintes et les modèles STEP 3D de nos partenaires de confiance.
| SOURCE | ECAD | MCAD | FICHIERS |
|---|---|---|---|
 Component Search Engine | SymboleEmpreinte | 3D | Télécharger |
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 Ultra Librarian | SymboleEmpreinte | Télécharger |
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Chaîne d'approvisionnement
Country of OriginMainland China, Philippines
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date1997-07-01
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
Pièces détachées
Diodes Inc.BSS138-7-F
N-Channel 50 V 3.5 Ohm Surface Mount Enhancement Mode Transistor SOT-23-3
Diodes Inc.DMG2305UX-13
P-Channel 20 V 65 Ohms Surface Mount Enhancement Mode Mosfet - SOT-23-3
Diodes Inc.BSS123-7-F
N-Channel 100 V 6 Ohm Surface Mount Enhancement Mode Transistor SOT-23-3
Descriptions
Descriptions de onsemi FDV301N fournies par ses distributeurs.
Power MOSFET, N Channel, 25 V, 220 mA, 4 ohm, SOT-23, Surface Mount
MOSFET Operating temperature: -55...150 °C Housing type: SOT-23 Polarity: N Variants: Enhancement mode Power dissipation: 350 mW
This N-Channel logic level enhancement mode field effect transistor is produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This device has been designed especially for low voltage applications as a replacement for digital transistors. Since bias resistors are not required, this one N-channel FET can replace several different digital transistors, with different bias resistor values.
N CHANNEL MOSFET, 220MA, 25V, SOT23; Transistor Polarity:N Channel; Continuous Drain Current Id:220mA; Drain Source Voltage Vds:25V; On Resistance Rds(on):5ohm; Rds(on) Test Voltage Vgs:2.7V; Threshold Voltage Vgs Typ:850mV; Power Dissipation Pd:350mW; Transistor Case Style:SOT-23; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:220mA; Current Temperature:25°C; ESD HBM:6kV; External Depth:2.5mm; External Length / Height:1.12mm; External Width:3.05mm; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:SOT-23; Power Dissipation Pd:350mW; Power Dissipation Pd:350mW; Pulse Current Idm:500mA; SMD Marking:301; Tape Width:8mm; Termination Type:SMD; Voltage Vds Typ:25V; Voltage Vgs Max:850mV; Voltage Vgs Rds on Measurement:4.5V; Voltage Vgs th Max:1.5V
Alias du fabricant
onsemi possède plusieurs marques à travers le monde que les distributeurs peuvent utiliser comme noms alternatifs. onsemi peut également être connu sous les noms suivants :
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Historique des stocks
Tendance sur 3 mois : -10.37%
Modèles CAO
Télécharger le symbole, l’empreinte et le 3D STEP
Pièces de rechange
0 composant disponible
Spécifications techniques
Physical
Case/PackageSOT-23
Contact PlatingTin
MountSurface Mount
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)220 mA
Current2 A
Current Rating220 mA
Drain to Source Breakdown Voltage25 V
Drain to Source Resistance5 Ω
Drain to Source Voltage (Vdss)25 V
Dual Supply Voltage25 V
Element ConfigurationSingle
Fall Time6 ns
Gate to Source Voltage (Vgs)8 V
Input Capacitance9.5 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation350 mW
Manufacturer Package IdentifierSOT−23 (TO−236) CASE 318−08 ISSUE AR
Min Breakdown Voltage25 V
Min Operating Temperature-55 °C
Nominal Vgs850 mV
Number of Channels1
Number of Elements1
PackagingCut Tape
Power Dissipation350 mW
Rds On Max4 Ω
Resistance4 Ω
Rise Time6 ns
Schedule B8541210080
TerminationSMD/SMT
Turn-Off Delay Time3.5 ns
Turn-On Delay Time3.2 ns
Voltage50 V
Voltage Rating (DC)25 V
Dimensions
Height1.11 mm
Length2.92 mm
Width3.05 mm
Conformité
Classification environnementale
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Déclarations de conformité