onsemi FDP10N60NZ

N-Channel Power MOSFET, UniFETTM II, 600V, 10A, 750mΩ, TO-220
$ 0.753
Obsolete
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Téléchargez les fiches techniques et la documentation du fabricant pour onsemi FDP10N60NZ.

IHS

Datasheet10 pagesIl y a 12 ans
Datasheet0 pageIl y a 0 an

onsemi

element14 APAC

Fairchild Semiconductor

Farnell

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Chaîne d'approvisionnement

Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2010-09-20
Lifecycle StatusObsolete (Last Updated: 5 days ago)
LTB Date2022-06-23
LTD Date2022-12-23
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 5 days ago)

Pièces détachées

N-Channel Power MOSFET, UniFETTM II, 600 V, 12 A, 650 mΩ, TO-220
STMicroelectronicsSTP13NK60Z
N-Channel 600 V, 0.48 Ohm, 13 A TO-220 Zener-Protected SuperMesh(TM) POWER MOSFET
STMicroelectronicsSTP10NM60N
N-channel 600 V, 0.53 Ohm typ., 10 A, MDmesh II Power MOSFET in TO-220 package
STMicroelectronicsSTP10NK60Z
N-channel 600 V, 0.65 Ohm typ., 10 A, Zener-protected SuperMESH Power MOSFET in TO-220 package
onsemiFCP380N60
N-Channel Power MOSFET, SUPERFET® II, FAST, 600V, 10.2A, 380mΩ, TO-220
N-Channel Power MOSFET, SUPERFET® II, Easy Drive, 600V, 10.2A, 380mΩ, TO-220

Descriptions

Descriptions de onsemi FDP10N60NZ fournies par ses distributeurs.

N-Channel Power MOSFET, UniFETTM II, 600V, 10A, 750mΩ, TO-220
Trans MOSFET N-CH 600V 10A 3-Pin(3+Tab) TO-220 Rail
Power Field-Effect Transistor, 10A I(D), 600V, 0.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET,N CH,600V,10A,TO220; Transistor Polarity:N Channel; Continuous Drain Current Id:10A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.64ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:185W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (19-Dec-2011)
UniFETTM II MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on advanced planar stripe and DMOS technology. This advanced MOSFET family has the smallest on-state resistance among the planar MOSFET, and also provides superior switching performance and higher avalanche energy strength. In addition, internal gate-source ESD diode allows UniFET II MOSFET to withstand over 2kV HBM surge stress. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.

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