MOSFET, N CH, 30V, 21A, POWER56; Transistor Polarity:N Channel; Continuous Drain Current Id:21A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.008ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.9V; Power Dissipation Pd:42W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:Power 56; No. of Pins:8; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)

Farnell

Embedded - Microcontrollers 1 (Unlimited) 100-LQFP 55 16K x 8 Internal DMA, LVD, POR, PWM, WDT Surface Mount Tray 32-Bit RENESAS R5F562TAADFP#V132 Bit Microcontroller, RX, 100MHz, Memory 256KB, RAM 16KB, CAN, I2C, SPI, UART, LQFP-100

Utmel Electronic

The FDMS8888 has been designed to minimixe losses in power conversion application. The Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance.

Fairchild Semiconductor

Images

Newark

Rochester Electronics

Alias du fabricant

onsemi possède plusieurs marques à travers le monde que les distributeurs peuvent utiliser comme noms alternatifs. onsemi peut également être connu sous les noms suivants :

ON Semiconductor
ONS
ONSEMICON
ON SEM
ON SEMICONDUCTO
ON SEMICONDUCTORS
ONSEMIC
ON Semicondu
OSC
ONSE
ON Semiconductor / Fairchild
ON SEMICOND
SCG
ON Semiconductor Cor
ON SEMICO
ONSM
onsemi / Fairchild
ON SEMICONDUCTOR CORP
MOT/ON SEMI
Fairchild/ONSemiconductor
ON Semiconductor Corporation
ON4
ON Semi - ON Semiconductor
ON SEMICONDUCT
ON-SEMI SCG
ON Semiconductor Inc.
onsemiconductor
On Semiconductor Ltd

Historique des stocks

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Modèles CAO

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Pièces de rechange

0 composant disponible

Spécifications techniques

Physical

MountSurface Mount

Number of Pins8

Number of Terminals5

Weight74 mg

Technical

Continuous Drain Current (ID)13.5 A

Drain to Source Breakdown Voltage30 V

Drain to Source Resistance9.5 mΩ

Drain to Source Voltage (Vds)30 V

Element ConfigurationSingle

Fall Time4 ns

Gate to Source Voltage (Vgs)20 V

Input Capacitance1.585 nF

Max Operating Temperature150 °C

Max Power Dissipation42 W

Min Breakdown Voltage30 V

Min Operating Temperature-55 °C

Nominal Vgs1.9 V

Number of Elements1

Power Dissipation42 W

Rds On Max9.5 mΩ

Rise Time6 ns

Turn-Off Delay Time23 ns

Turn-On Delay Time9 ns

Dimensions

Height1.05 mm

Length5 mm

Width6 mm

Fiches techniques et documents

Téléchargez les fiches techniques et la documentation du fabricant pour onsemi FDMS8888.

IHS

Datasheet0 pageIl y a 0 an

onsemi

element14 APAC

Fairchild Semiconductor

Farnell

Conformité

Classification environnementale

China RoHSNon-Compliant

Radiation HardeningNo

REACH SVHCAffected

RoHSCompliant

Déclarations de conformité

Rohs Statement3 pagesIl y a 5 ans

Reach Statement3 pagesIl y a 13 ans

Materials Sheet3 pagesIl y a 13 ans

Materials Sheet3 pagesIl y a 12 ans

Reach Statement3 pagesIl y a 12 ans

Reach Statement8 pagesIl y a 11 ans

Rohs Statement1 pageIl y a 13 ans

Rohs Statement1 pageIl y a 14 ans

Reach Statement2 pagesIl y a 13 ans

Rohs StatementN/AN/A