MOSFET, N, SMD, MLP; Transistor Type:PowerTrench; Transistor Polarity:N; Voltage, Vds Typ:30V; Current, Id Cont:14A; Resistance, Rds On:0.009ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:1.6V; Case Style:Power 56; Termination Type:SMD; Current, Idm Pulse:100A; No. of Pins:8; Power Dissipation:2.5W; SMD Marking:FDMS8690; Voltage, Vds Max:30V; Voltage, Vgs th Max:3V

Farnell

This device has been designed specifically to improve the efficiency of DC/DC converters. Using new techniques in MOSFET construction, the various components of gate charge and capacitance have been optimized to reduce switching losses. Low gate resistance and very low Miller charge enable excellent performance with both adaptive and fixed dead time gate drive circuits. Very low rDS(on) has been maintained to provide an extremely versatile device.

Fairchild Semiconductor

Images

Rochester Electronics

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Alias du fabricant

onsemi possède plusieurs marques à travers le monde que les distributeurs peuvent utiliser comme noms alternatifs. onsemi peut également être connu sous les noms suivants :

ON Semiconductor
ONS
ONSEMICON
ON SEM
ON SEMICONDUCTO
ON SEMICONDUCTORS
ONSEMIC
ON Semicondu
OSC
ONSE
ON SEMICOND
ON Semiconductor / Fairchild
SCG
ON Semiconductor Cor
ON SEMICO
ONSM
ON SEMICONDUCTOR CORP
onsemi / Fairchild
MOT/ON SEMI
Fairchild/ONSemiconductor
ON Semiconductor Corporation
ON4
ON Semi - ON Semiconductor
ON SEMICONDUCT
ON-SEMI SCG
ON Semiconductor Inc.
onsemiconductor
On Semiconductor Ltd

Historique des stocks

Tendance sur 3 mois : Restocked

Modèles CAO

0 models available

Pièces de rechange

0 composant disponible

Spécifications techniques

Physical

MountSurface Mount

Number of Pins8

Number of Terminals8

Weight231 mg

Technical

Continuous Drain Current (ID)27 A

Current Rating19.8 A

Drain to Source Breakdown Voltage30 V

Drain to Source Resistance9 mΩ

Drain to Source Voltage (Vdss)30 V

Element ConfigurationSingle

Fall Time19 ns

Gate to Source Voltage (Vgs)20 V

Input Capacitance1.68 nF

Max Operating Temperature150 °C

Max Power Dissipation2.8 W

Min Breakdown Voltage30 V

Min Operating Temperature-55 °C

Number of Elements1

Rds On Max9 mΩ

Rise Time1.8 ns

Turn-Off Delay Time26 ns

Voltage Rating (DC)30 V

Fiches techniques et documents

Téléchargez les fiches techniques et la documentation du fabricant pour onsemi FDMS8690.

IHS

Datasheet7 pagesIl y a 19 ans

Datasheet0 pageIl y a 0 an

Farnell

Fairchild Semiconductor

iiiC

DigiKey

Conformité

Classification environnementale

Lead FreeLead Free

REACH SVHCYes

RoHSCompliant

Déclarations de conformité

Reach Statement8 pagesIl y a 11 ans

Rohs Statement1 pageIl y a 13 ans

Rohs Statement1 pageIl y a 14 ans

Reach Statement2 pagesIl y a 13 ans