onsemi FDMS7580

N-Channel Power Trench® MOSFET 25V, 7.5mΩ
$ 0.73
Obsolete
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element14 APAC

onsemi

Fairchild Semiconductor

Farnell

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Chaîne d'approvisionnement

Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2009-12-30
Lifecycle StatusObsolete (Last Updated: 3 days ago)
LTB Date2021-10-08
LTD Date2022-04-08
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 3 days ago)

Pièces détachées

Single N-Channel 25 V 13.4 mOhm 12 nC HEXFET® Power Mosfet - PQFN 3.3 x 3.3 mm
Single N-Channel 30 V 6.6 mOhm 20 nC HEXFET® Power Mosfet - PQFN 3.3 x 3.3 mm
N-Channel PowerTrench® MOSFET, Dual CoolTM 33, 30V, 40A, 6.25mΩ
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FAIRCHILD SEMICONDUCTOR FDMC7672S MOSFET Transistor, N Channel, 18 A, 30 V, 0.005 ohm, 10 V, 1.6 V
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Trans MOSFET N-CH 30V 16A Automotive AEC-Q101 8-Pin PowerPAK 1212 EP T/R

Descriptions

Descriptions de onsemi FDMS7580 fournies par ses distributeurs.

N-Channel Power Trench® MOSFET 25V, 7.5mΩ
N-CHANNEL POWER TRENCH MOSFET Power Field-Effect Transistor, 15A I(D), 25V, 0.0075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
2.5W(Ta),27W(Tc) 20V 3V@ 250µA 20nC@ 10 V 1individualNChannel 25V 7.5mΩ@ 15A,10V 15A,29A 1.19nF@13V QFN SMD mount 6mm*5mm*1.1mm
MOSFET, N CH, 25V, 28A, POWER56; Transistor Polarity:N Channel; Continuous Drain Current Id:28A; Drain Source Voltage Vds:25V; On Resistance Rds(on):0.0059ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.6V; Power Dissipation Pd:27W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:Power 56; No. of Pins:8; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)
• This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on), fast switching speed and body diode reverse recovery performance.

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