onsemi FDMS2510SDC

Transistor MOSFET Array Dual N-Channel 25V 28A 8-Pin Power 56 T/R
$ 1.193
Obsolete
Page du fabricantFiche technique

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FDMS2510SDC9 000235
Rochester ElectronicsFDMS2510SDC15 037
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Fiches techniques et documents

Téléchargez les fiches techniques et la documentation du fabricant pour onsemi FDMS2510SDC.

IHS

Datasheet0 pageIl y a 0 an

Newark

Fairchild Semiconductor

Arrow Electronics

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Chaîne d'approvisionnement

Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2010-09-14
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2013-09-11
LTD Date2014-03-11

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Descriptions

Descriptions de onsemi FDMS2510SDC fournies par ses distributeurs.

Transistor MOSFET Array Dual N-Channel 25V 28A 8-Pin Power 56 T/R
Avnet
Power Field-Effect Transistor, 28A I(D), 25V, 0.0029ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA
IHS
N CH MOSFET, 25V, 28A, 8-PWR56; Transist; N CH MOSFET, 25V, 28A, 8-PWR56; Transistor Polarity:N Channel; Continuous Drain Current Id:28A; Drain Source Voltage Vds:25V; On Resistance Rds(on):2.4mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.7V; No. of Pins:8
element14 APAC
This N-Channel MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench® process. Advancements in both silicon and Dual Cool™ package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance by extremely low Junction-to-Ambient thermal resistance. This device has the added benefit of an efficient monolithic Schottky body diode.
Fairchild Semiconductor

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Newark
Rochester Electronics

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