onsemi FDMC8588

Single N-Channel 25 V 6.9 mOhm 17 nC 2.4 W PowerTrench SMT Mosfet - POWER 33-8
$ 0.406
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DistributorSKUMinPkg
Avnet
2
FDMC85881 011 0001773
9h
Verical
4
FDMC85883 000767
Rochester Electronics
2
FDMC85883 445 291
7h
Flip ElectronicsFDMC85881 011 000
>1wk
FarnellFDMC858803KTape & Reel
7h

Fiches techniques et documents

Téléchargez les fiches techniques et la documentation du fabricant pour onsemi FDMC8588.

onsemi

Datasheet8 pagesIl y a 2 ans
Datasheet0 pageIl y a 0 an
Datasheet0 pageIl y a 0 an

IHS

Farnell

Fairchild Semiconductor

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Chaîne d'approvisionnement

Country of OriginPhilippines
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2012-02-07
Lifecycle StatusProduction (Last Updated: 5 years ago)
LTB Date2021-10-08
LTD Date2022-04-08
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)

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InfineonIRFHM4234TRPBF
25V Single N-Channel HEXFET Power MOSFET in a 3.3mm X 3.3mm PQFN package, PG-TSDSON-8, RoHS
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Descriptions

Descriptions de onsemi FDMC8588 fournies par ses distributeurs.

Single N-Channel 25 V 6.9 mOhm 17 nC 2.4 W PowerTrench SMT Mosfet - POWER 33-8
Future Electronics
TAPE REEL/PT8 Thin gate, 25/12V, Nch Mosfet in PQFN33
Newark
N-Channel PowerTrench® MOSFET 25V, 40A, 5.7mΩ
onsemi
Trans MOSFET N-CH 25V 16.5A 8-Pin Power 33 T/R
Verical
Power Field-Effect Transistor, 16.5A I(D), 25V, 0.005ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240BA
IHS
POWER FIELD-EFFECT TRANSISTOR, 1
ODG (Origin Data Global)
MOSFET N-CH 25V 16.5A/40A PWR33
Easev
This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(on), fast switching speed and body diode reverse recovery performance.
Fairchild Semiconductor

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Future Electronics
Rochester Electronics

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