onsemi FDFMA2N028Z
$ 0.262
Obsolete
Prix et stock
Distributeurs agréés
Distributeurs de solutions de stockage non agréés
Revendeurs non agréés
Historique des stocks
Tendance sur 3 mois : +0.00%
Modèles CAO
Télécharger le symbole, l’empreinte et le 3D STEP
Pièces de rechange
0 composant disponible
Chaîne d'approvisionnement
Country of OriginThailand
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2007-01-04
Lifecycle StatusObsolete (Last Updated: 5 days ago)
LTB Date2021-10-08
LTD Date2022-04-08
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 5 days ago)
Pièces détachées
onsemiFDMA1032CZ
Dual MOSFET, Complementary N and P Channel, 20 V, 20 V, 3.7 A, 3.7 A, 0.037 ohm
Diodes Inc.ZXMN2F34FHTA
Power MOSFET, Low Voltage, N Channel, 20 V, 4 A, 0.06 ohm, SOT-23, Surface Mount
InfineonIRF7307TRPBF
Dual N/P-Channel 20 V 0.07/0.14 Ohm 20/22 nC HEXFET® Power Mosfet - SOIC-8
Descriptions
Descriptions de onsemi FDFMA2N028Z fournies par ses distributeurs.
Integrated N-Channel PowerTrench® MOSFET and Schottky Diode 20V, 3.7A, 68mΩ
20V,3.7A,68 OHM, NCH POWER TRENCH MOSFET & SCHOTTKY DIODE
Trans MOSFET N-CH 20V 3.7A 6-Pin MicroFET EP T/R
Small Signal Field-Effect Transistor, 3.7A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFET, N-CH, 20V, 3.7A, UFET-6
20V 3.7A 68 O Nch Er Tre Rohs Compliant: Yes
MOSFET 20V N-Ch PT MFET SCHOTTKY
MOSFET N-CH 20V 3.7A 6MICROFET
MOSFETs 20V N-Ch PT MFET_SCHOTTKY
SMALL SIGNAL FIELD-EFFECT TRANSI
This device is designed specifically as a single package solution for a boost topology in cellular handset and other ultra–portable applications. It features a MOSFET with low on–state resistance, and an independently connected schottky diode with low forward voltage. The MicroFET 2x2 package offers exceptional thermal performance for its physical size and is well suited to switching and linear mode applications.
Alias du fabricant
onsemi possède plusieurs marques à travers le monde que les distributeurs peuvent utiliser comme noms alternatifs. onsemi peut également être connu sous les noms suivants :
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Historique des stocks
Tendance sur 3 mois : +0.00%
Modèles CAO
Télécharger le symbole, l’empreinte et le 3D STEP
Pièces de rechange
0 composant disponible
Spécifications techniques
Physical
MountSurface Mount
Number of Pins6
Number of Terminals6
Weight60 mg
Technical
Continuous Drain Current (ID)3.7 A
Current Rating3.7 A
Drain to Source Breakdown Voltage20 V
Drain to Source Resistance680 mΩ
Drain to Source Voltage (Vdss)20 V
Element ConfigurationSingle
Fall Time8 ns
Gate to Source Voltage (Vgs)12 V
Input Capacitance455 pF
Max Operating Temperature150 °C
Max Power Dissipation1.4 W
Min Breakdown Voltage20 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation1.4 W
Rds On Max68 mΩ
Resistance68 MΩ
Rise Time8 ns
Threshold Voltage1 V
Turn-Off Delay Time14 ns
Turn-On Delay Time8 ns
Voltage Rating (DC)20 V
Dimensions
Height750 µm
Length2 mm
Width2 mm
Conformité
Classification environnementale
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Déclarations de conformité