onsemi FDC6327C

Dual N/P-Channel 20 V 0.08 Ohm 2.5 V Specified PowerTrench Mosfet - SSOT-6

ON SEMICONDUCTOR - FDC6327C - Dual MOSFET, Complementary N and P Channel, 20 V, 2.7 A, 0.069 ohm, SuperSOT, Surface Mount

Small Signal Field-Effect Transistor, 2.7A I(D), 20V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET

MOSFET, DUAL, NP, SUPERSOT-6; Transistor Polarity:N and P Channel; Continuous Drain Current Id:1.9A; Drain Source Voltage Vds:20V; On Resistance Rds(on):250mohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs Typ:900mV; Transistor Case Style:SuperSOT; No. of Pins:6; SVHC:No SVHC (20-Jun-2011); Cont Current Id N Channel 2:2.7A; Cont Current Id P Channel:1.6A; Current Id Max:2.7A; Current Temperature:25°C; Full Power Rating Temperature:25°C; No. of Transistors:2; On State Resistance N Channel Max:80mohm; On State Resistance P Channel Max:170mohm; Package / Case:SuperSOT-6; Power Dissipation Pd:960mW; Power Dissipation Pd:960mW; Pulse Current Idm:8A; SMD Marking:3273; Termination Type:SMD; Uni / Bi Directional Polarity:NP; Voltage Vds:20V; Voltage Vds Typ:20V; Voltage Vgs Max:900mV; Voltage Vgs Rds on Measurement:4.5V; Voltage Vgs th Max:1.5V; Voltage Vgs th P Channel Max:1.5V

These N & P-Channel 2.5V specified MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance. These devices have been designed to offer exceptional power dissipation in a very small footprint for applications where the bigger more expensive SO-8 and TSSOP-8 packages are impractical.