onsemi FDA70N20
EOL
Prix et stock
Distributeurs agréés
Distributeurs de solutions de stockage non agréés
Revendeurs non agréés
Historique des stocks
Tendance sur 3 mois : -100%
Modèles CAO
Télécharger le symbole, l’empreinte et le 3D STEP
Pièces de rechange
0 composant disponible
Chaîne d'approvisionnement
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2005-11-29
Lifecycle StatusEOL (Last Updated: 4 days ago)
LTB Date2022-06-23
LTD Date2022-12-23
Manufacturer Lifecycle StatusLAST SHIPMENTS (Last Updated: 4 days ago)
Pièces détachées
InfineonIRFP4227PBF
MOSFET Operating temperature: -40...175 °C Housing type: TO-247 Power dissipation: 330 W
InfineonIRFP4332PBF
MOSFET Operating temperature: -40...175 °C Housing type: TO-247 Power dissipation: 360 W
Descriptions
Descriptions de onsemi FDA70N20 fournies par ses distributeurs.
N-Channel Power MOSFET, UniFETTM, 200V, 70A, 35mΩ, TO-3P
MOSFET N-CH 200V 70A TO-3P / Trans MOSFET N-CH 200V 70A 3-Pin(3+Tab) TO-3P Tube
N-Channel 200 V 0.035 Ohm Flange Mount UniFET Mosfet - TO-3PN
200 V N-CHANNEL MOSFET Power Field-Effect Transistor, 70A I(D), 200V, 0.035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFET, N, TO-3P; Transistor Polarity:N Channel; Continuous Drain Current Id:70A; Drain Source Voltage Vds:200V; On Resistance Rds(on):35mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5V; Power Dissipation Pd:417W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-3P; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:70A; Package / Case:TO-3P; Power Dissipation Pd:417W; Power Dissipation Pd:417W; Pulse Current Idm:280A; Termination Type:Through Hole; Voltage Vds Typ:200V; Voltage Vgs Max:30V; Voltage Vgs Rds on Measurement:10V
UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.
Alias du fabricant
onsemi possède plusieurs marques à travers le monde que les distributeurs peuvent utiliser comme noms alternatifs. onsemi peut également être connu sous les noms suivants :
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Historique des stocks
Tendance sur 3 mois : -100%
Modèles CAO
Télécharger le symbole, l’empreinte et le 3D STEP
Pièces de rechange
0 composant disponible
Spécifications techniques
Physical
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight6.401 g
Technical
Continuous Drain Current (ID)70 A
Current Rating70 A
Drain to Source Breakdown Voltage200 V
Drain to Source Resistance35 mΩ
Drain to Source Voltage (Vdss)200 V
Element ConfigurationSingle
Fall Time39 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance3.97 nF
Max Operating Temperature150 °C
Max Power Dissipation417 W
Min Breakdown Voltage200 V
Min Operating Temperature-55 °C
Nominal Vgs5 V
Number of Elements1
Power Dissipation417 W
Rds On Max35 mΩ
Resistance35 MΩ
Rise Time235 ns
Schedule B8541290080
Threshold Voltage5 V
Turn-Off Delay Time65 ns
Turn-On Delay Time71 ns
Voltage Rating (DC)200 V
Dimensions
Height20.1 mm
Length15.8 mm
Width5 mm
Conformité
Classification environnementale
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Déclarations de conformité