onsemi 2SK3746

Tray Through Hole N-Channel Single Mosfet Transistor 2A Ta 2A 2.5W 59ns
$ 3.532
Obsolete
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Datasheet4 pagesIl y a 20 ans

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Chaîne d'approvisionnement

Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2005-06-13
Lifecycle StatusObsolete (Last Updated: 4 months ago)

Pièces détachées

Panasonic2SK3747
Power Field-Effect Transistor, 4A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
NDUL03N150CG Series 1500 V 2.5 A 10.5 Ohm N-Ch Power Mosfet -TO-3PF
N-Channel 1500 V 2.5 A 10.5 Ohm Flange Mount Power Mosfet -TO220FP
STMicroelectronicsSTP1N105K3
N-channel 1050 V, 8 Ohm typ., 1.4 A SuperMESH3(TM) Power MOSFET in TO-220 package
STMicroelectronicsSTFW3N170
N-channel 1700 V, 7 Ohm typ., 2.6 A, PowerMESH Power MOSFET in TO-3PF package
STMicroelectronicsSTFW3N150
N-channel 1500 V, 6 Ohm, 2.5 A, PowerMESH(TM) power MOSFET in TO-3PF

Descriptions

Descriptions de onsemi 2SK3746 fournies par ses distributeurs.

Tray Through Hole N-Channel Single Mosfet Transistor 2A Ta 2A 2.5W 59ns
High-Voltage, High-Speed Switching Applications | MOSFET N-CH 1500V 2A TO-3PB
Trans MOSFET N-CH 1.5KV 2A 3-Pin(3+Tab) TO-3PB
Power Field-Effect Transistor, 2A I(D), 1500V, 13ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFET, N, TO-3PB; Transistor Polarity:N Channel; Continuous Drain Current Id:2A; Drain Source Voltage Vds:1.5kV; On Resistance Rds(on):10ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3.5V; Power Dissipation Pd:2.5W; Transistor Case Style:TO-3PB; No. of Pins:3; Current Id Max:2A; Package / Case:TO-3PB; Power Dissipation Pd:100W; Power Dissipation Pd:2.5W; Pulse Current Idm:4A; Termination Type:Through Hole; Voltage Vds Typ:1.5kV; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V

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