onsemi 2N3903

Bulk Through Hole NPN Single Bipolar (BJT) Transistor 50 @ 10mA 1V 200mA 625mW 60V
$ 0.025
Obsolete
Page du fabricantFiche technique

Prix et stock

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DistributorSKUMinPkg
Rochester Electronics2N390311 060
38m
Farnell2N390301
1d
Component Stockers USA2N3903486
15h
Win SourceWS-2N3903201745
2h
Worldway Electronics2N390328 3847Bulk
1d

Fiches techniques et documents

Téléchargez les fiches techniques et la documentation du fabricant pour onsemi 2N3903.

IHS

Datasheet7 pagesIl y a 21 ans
Datasheet2 pagesIl y a 17 ans
Datasheet6 pagesIl y a 21 ans
Datasheet1 pageIl y a 0 an
Datasheet2 pagesIl y a 0 an
Datasheet3 pagesIl y a 25 ans
Datasheet3 pagesIl y a 25 ans
Datasheet6 pagesIl y a 25 ans

Farnell

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Chaîne d'approvisionnement

Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.75
Introduction Date1971-01-06
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2002-11-09
LTD Date2003-05-09

Pièces détachées

onsemi2N3904TF
Bipolar (BJT) Single Transistor, NPN, 40 V, 200 mA, 625 mW, TO-92, Through Hole
Détails
onsemi2N3904TA
Small Signal Bipolar Transistor, 0.2A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-92
Détails
onsemi2N3904BU
Bipolar (BJT) Single Transistor, NPN, 40 V, 200 mA, 625 mW, TO-92, Through Hole
Détails
onsemiKSC815YBU
Bulk Through Hole NPN KSC815 Bipolar (BJT) Transistor 120 @ 50mA 1V 200mA 400mW 200MHz
Détails
onsemiKSC945GBU
Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-92
Détails

Descriptions

Descriptions de onsemi 2N3903 fournies par ses distributeurs.

Bulk Through Hole NPN Single Bipolar (BJT) Transistor 50 @ 10mA 1V 200mA 625mW 60V
Fly-Wing Technology
Small Signal Bipolar Transistor, 0.2A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-18
IHS
General Purpose Transistors(NPN Silicon) | TRANS NPN 40V 0.2A TO-92
Win Source
200 mA 40 V NPN Si SMALL SIGNAL TRANSISTOR TO-92
Component Stockers USA
RF Bipolar Transistor; Transistor Polarity:N Channel; Package/Case:TO-92; Power Dissipation, Pd:0.625W; DC Current Gain Min (hfe):15; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes; C-E Breakdown Voltage:40V ;RoHS Compliant: Yes
Newark
TRANSISTOR, N CH 100MA TO-92; Transistor Polarity:NPN; Collector-to-Emitter Breakdown Voltage:40V; Power Dissipation Pd:625mW; Operating Temperature Range:-55°C to +150°C; Case Style:TO-92; Continuous Collector Current Ic:100mA; Termination Type:Through Hole; Transistor Type:General Purpose
Farnell

Images

Newark
Rochester Electronics

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