NTE Electronics NTE6810

IC-NMOS Static RAM 1k 450ns 24-lead DIP
Obsolete
Page du fabricantFiche technique

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Electronic SupplyNTE68102
2d

Fiches techniques et documents

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IHS

Datasheet4 pagesIl y a 24 ans

Chaîne d'approvisionnement

Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8542.32.00.41
Introduction Date1996-03-14
Lifecycle StatusObsolete (Last Updated: 5 months ago)

Descriptions

Descriptions de NTE Electronics NTE6810 fournies par ses distributeurs.

IC-NMOS Static RAM 1k 450ns 24-lead DIP
NTE Electronics
replacement Memory SRAM 1K 450NS 24DIP
Mouser
SRAM Memory IC; Memory Type:SRAM; Interface Type:Serial; Memory Size:1KB; Memory Organization:128 x 8; Access Time, Tacc:450ns; Memory Voltage, Vcc:5V; Supply Voltage Min:4.75V; Supply Voltage Max:5.25V
Newark
The NTE6810 is a byte-orgainzed memory in a 24-Lead DIP type package designed for use in bus-organized systems. It is fabricated with N-channel silicon-gate technology. For ease of use, this device operates from a single power supply, has compatibility with TTL and DTL, and needs no clocks or refreshing because of static operation. The memory is compatible with the 6800 Microcomputer Family, providing random storage in byte increments. Memory expansion is provided through multiple Chip Select inputs.

Alias du fabricant

NTE Electronics possède plusieurs marques à travers le monde que les distributeurs peuvent utiliser comme noms alternatifs. NTE Electronics peut également être connu sous les noms suivants :

  • NTE
  • NTE Electronics Inc
  • NTE ELECT
  • NTE Electronics Incorporated
  • NTE ELECTRONICS ACCT
  • NTE Electronic Inc
  • NTE/EDGE
  • NTE/PHILIPS ECG
  • NTE 88'S
  • PROSPERITY ELECTRONICS CO LTD
  • NTE/PEC
  • NTE Electronics Inc (use ECG / NTE Electronics)
  • NTE-F