Nexperia PUMD2,115
$ 0.053
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Tendance sur 3 mois : +142%
Modèles CAO
Télécharger le symbole, l’empreinte et le 3D STEP
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Modèles CAO
Téléchargez les symboles Nexperia PUMD2,115, les empreintes et les modèles STEP 3D de nos partenaires de confiance.
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Stock
1,376,739
2,824,988
Authorized Distributors
5
4
Mount
Surface Mount
Surface Mount
Case/Package
TSSOP
TSSOP
Polarity
NPN, PNP
NPN, PNP
Collector Emitter Breakdown Voltage
50 V
50 V
Max Collector Current
100 mA
100 mA
Transition Frequency
230 MHz
230 MHz
Collector Emitter Saturation Voltage
150 mV
150 mV
hFE Min
60
60
Power Dissipation
-
-
Chaîne d'approvisionnement
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1997-09-01
Lifecycle StatusProduction (Last Updated: 3 years ago)
Manufacturer Lifecycle StatusRELEASED FOR SUPPLY (Last Updated: 3 years ago)
Descriptions
Descriptions de Nexperia PUMD2,115 fournies par ses distributeurs.
50 V, 100 mA NPN/PNP resistor-equipped double transistor; R1 = 22 kΩ, R2 = 22 kΩ
Trans Digital BJT NPN/PNP 50V 100mA 300mW Automotive 6-Pin TSSOP T/R
Bipolar Transistors (BJT); PUMD2,115; NEXPERIA; NPN, PNP; 6; 50 V; 100 mA
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN and PNP, Silicon
PUMD2 Series 40/10 V 100 mA Surface Mount NPN/PNP Digital Transistor - SOT-363
100 mA 50 V 2 CHANNEL NPN AND PNP Si SMALL SIGNAL TRANSISTOR
TRANS PREBIAS 1NPN 1PNP 6TSSOP / Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 300mW Surface Mount 6-TSSOP
Nexperia NPN/PNPdigital transistor, UMTencapsulation, SMD mount, Maximum DC collector current100 mA, maximum collector-emission voltage50 V
Bipolar Transistor Array; Module Configuration:Dual; Transistor Polarity:NPN & PNP; Collector Emitter Voltage, V(br)ceo:50V; Power Dissipation, Pd:200mW; DC Collector Current:100mA; DC Current Gain Max (hfe):60 ;RoHS Compliant: Yes
TRANSISTOR, DIGITAL, DUAL, SOT-363; Digital Transistor Polarity: NPN and PNP Complement; Collector Emitter Voltage V(br)ceo: 50V; Continuous Collector Current Ic: 100mA; Base Input Resistor R1: 22kohm; Base-Emitter Resistor R2: 22kohm; Resistor Ratio, R1 / R2: -; RF Transistor Case: SOT-363; No. of Pins: 6 Pin; Product Range: PUMD2 Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018); Collector Emitter Saturation Voltage Vce(on): 150mV; Continuous Collector Current Ic Max: 100A; Current Ic Continuous a Max: 100A; Current Ic hFE: 5mA; DC Collector Current: 100mA; DC Current Gain hFE: 60hFE; Full Power Rating Temperature: 25°C; Hfe Min: 60; Module Configuration: Dual; No. of Pins: 6Pins; No. of Transistors: 2; Operating Temperature Max: 150°C; Operating Temperature Min: -65°C; Operating Temperature Range: -65°C to +150°C; Power Dissipation Pd: 200mW; Power Dissipation Ptot Max: 300mW; Resistance R1: 22kohm; Resistance R2: 22kohm; Transistor Case Style: SOT-363; Transistor Polarity: NPN, PNP
Alias du fabricant
Nexperia possède plusieurs marques à travers le monde que les distributeurs peuvent utiliser comme noms alternatifs. Nexperia peut également être connu sous les noms suivants :
- Nexperia USA Inc
- NEXPER
- Nexperia BV
- NXP NEXPERIA
- Nexperia USA
- NEXP
- Nexperi
- NEXPERIA / NXP
- Nexperia Inc
- Nexperia/NXP Semiconductors
- NEXPERIA(Nexperia)
- NEXPERIA/NXP SEMICONDUCTOR
- Nexperia(Ahn Se)
- Nexperia Semiconductors Taiwan Ltd
- NEXPERIA/N
- NEXPERIA/PHILIPS
- NEXPERIA USA INC (UA)
- NEX-NXP
- NEXPERIA USA INC (VA)
- Infineon_Nexperia
- NEXPERIA (FORMERLY NXP) (4001801)
Historique des stocks
Tendance sur 3 mois : +142%
Modèles CAO
Télécharger le symbole, l’empreinte et le 3D STEP
Pièces de rechange
1 composant disponible
Spécifications techniques
Physical
Case/PackageTSSOP
Contact PlatingTin
MountSurface Mount
Number of Pins6
Number of Terminals6
Weight4.535924 g
Technical
Collector Emitter Breakdown Voltage50 V
Collector Emitter Saturation Voltage150 mV
Collector Emitter Voltage (VCEO)50 V
Element ConfigurationDual
Emitter Base Voltage (VEBO)10 V
hFE Min60
Max Breakdown Voltage50 V
Max Collector Current100 mA
Max Operating Temperature150 °C
Max Power Dissipation300 mW
Min Operating Temperature-65 °C
Number of Elements2
PolarityNPN, PNP
Transition Frequency230 MHz
Dimensions
Height1 mm
Length2.2 mm
Width1.35 mm
Conformité
Classification environnementale
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCUnaffected
RoHSCompliant
Déclarations de conformité