Nexperia PEMD12,115
$ 0.136
Production
Prix et stock
Distributeurs agréés
Distributeurs de solutions de stockage non agréés
Revendeurs non agréés
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Newark | PEMD12,115 | 560 | 5 | Cut Tape | ||||||||
| Verical | PEMD12,115 | 40 000 | 2206 | |||||||||
| Rochester Electronics | PEMD12,115 | 4 633 890 | 23h | |||||||||
| DigiKey | 1727-2155-1-ND | 550 | 1 | Cut Tape | ||||||||
| TME | PEMD12.115 | 0 | 1 | 12h |
Historique des stocks
Tendance sur 3 mois : -0.27%
Modèles CAO
Télécharger le symbole, l’empreinte et le 3D STEP
Pièces de rechange
0 composant disponible
Chaîne d'approvisionnement
Country of OriginMalaysia
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2003-10-09
Lifecycle StatusProduction (Last Updated: 3 years ago)
Manufacturer Lifecycle StatusRELEASED FOR SUPPLY (Last Updated: 3 years ago)
Pièces détachées
NXP SemiconductorsPBSS4140V,115
Small Signal Bipolar Transistor, 1A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon
NXP SemiconductorsPBSS5140V,115
Tape & Reel (TR) Surface Mount PNP SINGLE Bipolar (BJT) Transistor 300 @ 100mA 5V 1A 500mW 150MHz
NXP SemiconductorsPBLS4003V,115
Trans Digital BJT NPN/PNP 50V/40V 100mA/500mA 6-Pin SOT-666 T/R
NXP SemiconductorsPBLS4005V,115
Trans Digital BJT NPN/PNP 50V/40V 100mA/500mA 6-Pin SOT-666 T/R
Descriptions
Descriptions de Nexperia PEMD12,115 fournies par ses distributeurs.
50 V, 100 mA NPN/PNP resistor-equipped double transistor; R1 = 47 kΩ, R2 = 47 kΩ
Trans Digital BJT NPN/PNP 50V 100mA Automotive 6-Pin SOT-666 T/R
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN and PNP, Silicon
1 PCS NPN,1 PCS PNP - Pre-Biased(Dual) 300mW 100mA 50V SOT-666 Digital Transistors ROHS
100 mA 50 V 2 CHANNEL NPN AND PNP Si SMALL SIGNAL TRANSISTOR
Dig.Transistor NPN/PNP 47K Auto SOT-666
Small Signal Digital (BRT) Transistor; Collector Emitter Voltage V(br)ceo:50V; Continuous Collector Current Ic:100mA; Base Input Resistor R1:47kohm; Base-Emitter Resistor R2:47kohm; Resistor Ratio, R1/R2:1 ;RoHS Compliant: Yes
TRANS NPN/PNP 50V 0.1A SOT666; Transistor Polarity:NPN / PNP; Collector Emitter Voltage V(br)ceo:50V; Power Dissipation Pd:300mW; DC Collector Current:100mA; DC Current Gain hFE:80; Operating Temperature Range:-65°C to +150°C; Transistor Case Style:SOT-666; No. of Pins:6; SVHC:No SVHC (20-Jun-2011); Collector Emitter Voltage Vces:150mV; Current Ic Continuous a Max:10mA; Hfe Min:80; Package / Case:SOT-666; Power Dissipation Pd:300mW; Termination Type:SMD; Transistor Type:General Purpose
Alias du fabricant
Nexperia possède plusieurs marques à travers le monde que les distributeurs peuvent utiliser comme noms alternatifs. Nexperia peut également être connu sous les noms suivants :
- Nexperia USA Inc
- NEXPER
- Nexperia BV
- NXP/NEXPERIA
- Nexperia USA
- NEXP
- Nexperi
- NEXPERIA / NXP
- Nexperia Inc
- Nexperia/NXP Semiconductors
- NEXPERIA(Nexperia)
- NEXPERIA/NXP SEMICONDUCTOR
- Nexperia(Ahn Se)
- Nexperia Semiconductors Taiwan Ltd
- NEXPERIA/N
- NEXPERIA/PHILIPS
- NEXPERIA USA INC (UA)
- NEX-NXP
- NEXPERIA USA INC (VA)
- NEXPERIA (FORMERLY NXP) (4001801)
Historique des stocks
Tendance sur 3 mois : -0.27%
Modèles CAO
Télécharger le symbole, l’empreinte et le 3D STEP
Pièces de rechange
0 composant disponible
Spécifications techniques
Physical
Case/PackageSOT-666
Contact PlatingTin
MountSurface Mount
Number of Pins6
Number of Terminals6
Weight4.535924 g
Technical
Collector Emitter Breakdown Voltage50 V
Collector Emitter Voltage (VCEO)50 V
Element ConfigurationDual
hFE Min80
Max Breakdown Voltage50 V
Max Collector Current100 mA
Max Operating Temperature150 °C
Max Power Dissipation300 mW
Min Operating Temperature-65 °C
Number of Elements2
PolarityNPN, PNP
Power Dissipation300 mW
TerminationSMD/SMT
Dimensions
Height6.35 mm
Length6.35 mm
Width6.35 mm
Conformité
Classification environnementale
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Déclarations de conformité