Nexperia PBSS4140DPN,115
$ 0.294
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| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Newark | PBSS4140DPN,115 | 2 090 | 1 | Cut Tape | ||||||||
| Arrow Electronics | PBSS4140DPN,115 | 5 030 | 1 | |||||||||
| Verical | PBSS4140DPN,115 | 5 030 | 16 | |||||||||
| Future Electronics | PBSS4140DPN,115 | 15 000 | 3K | Tape & Reel | ||||||||
| DigiKey | 1727-3896-1-ND | 9 000 | 1 | Cut Tape |
Historique des stocks
Tendance sur 3 mois : +11.79%
Modèles CAO
Télécharger le symbole, l’empreinte et le 3D STEP
Pièces de rechange
0 composant disponible
Modèles CAO
Téléchargez les symboles Nexperia PBSS4140DPN,115, les empreintes et les modèles STEP 3D de nos partenaires de confiance.
| SOURCE | ECAD | MCAD | FICHIERS |
|---|---|---|---|
 Component Search Engine | SymboleEmpreinte | 3D | Télécharger |
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Chaîne d'approvisionnement
Country of OriginMalaysia
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2001-12-14
Lifecycle StatusProduction (Last Updated: 2 years ago)
Manufacturer Lifecycle StatusRELEASED FOR SUPPLY (Last Updated: 2 years ago)
Pièces détachées
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onsemiMBT35200MT2G
Tape & Reel (TR) Surface Mount PNP Single Bipolar (BJT) Transistor 100 @ 1.5A 1.5V 2A 1W 100MHz
NXP SemiconductorsPMD9050D,115
Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 3-Element, NPN and PNP, Silicon
NXP SemiconductorsPVR100AD-B3V0,115
Integrated Zener Diode and NPN Bipolar Transistor 6-Pin TSOP T/R
Descriptions
Descriptions de Nexperia PBSS4140DPN,115 fournies par ses distributeurs.
Trans GP BJT NPN/PNP 40V 1A Automotive 6-Pin TSOP T/R
Small Signal Bipolar Transistor, 1A I(C), 40V V(BR)CEO, 2-Element, NPN and PNP, Silicon
40 V low VCEsat NPN/PNP transistor
General Purpose Transistors NPN,PNP Ic=1A VCEsat=500mV hfe=300~900 P=600mW SC74
Dual NPN/PNP transistor,PBSS4140DPN
Nexperia NPN/PNP, TSOP, , 1 A, -40 V
TRANSISTOR, SOT-457; Transistor Polarity: NPN, PNP; Collector Emitter Voltage V(br)ceo: 40V; Power Dissipation Pd: 370mW; DC Collector Current: -1A; DC Current Gain hFE: 300hFE; Transistor Case Style: SOT-457; No. of Pins: 6Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018); Collector Emitter Saturation Voltage Vce(on): 250V; Continuous Collector Current Ic Max: 1A; Current Ic @ Vce Sat: 50mA; Current Ic Continuous a Max: 1A; Current Ic hFE: 500mA; Full Power Rating Temperature: 25°C; Gain Bandwidth ft Typ: 150MHz; Hfe Min: 300; Module Configuration: Dual; Operating Temperature Min: -65°C; Operating Temperature Range: -65°C to +150°C; Power Dissipation Ptot Max: 750mW; Power Dissipation per device Max: 750mW; SMD Marking: M2; Voltage Vcbo: 40V
Bipolar Transistor Array; Module Configuration:Dual; Transistor Polarity:NPN & PNP; Collector Emitter Voltage, V(br)ceo:40V; Transition Frequency Typ, ft:150MHz; Power Dissipation, Pd:370mW; DC Collector Current:1A ;RoHS Compliant: Yes
Alias du fabricant
Nexperia possède plusieurs marques à travers le monde que les distributeurs peuvent utiliser comme noms alternatifs. Nexperia peut également être connu sous les noms suivants :
- Nexperia USA Inc
- NEXPER
- Nexperia BV
- NXP/NEXPERIA
- Nexperia USA
- NEXP
- Nexperi
- NEXPERIA / NXP
- Nexperia Inc
- Nexperia/NXP Semiconductors
- NEXPERIA(Nexperia)
- NEXPERIA/NXP SEMICONDUCTOR
- Nexperia(Ahn Se)
- Nexperia Semiconductors Taiwan Ltd
- NEXPERIA/N
- NEXPERIA/PHILIPS
- NEXPERIA USA INC (UA)
- NEX-NXP
- NEXPERIA USA INC (VA)
- NEXPERIA (FORMERLY NXP) (4001801)
Historique des stocks
Tendance sur 3 mois : +11.79%
Modèles CAO
Télécharger le symbole, l’empreinte et le 3D STEP
Pièces de rechange
0 composant disponible
Spécifications techniques
Physical
Case/PackageTSOP
Contact PlatingTin
MountSurface Mount
Number of Pins6
Number of Terminals6
Technical
Collector Base Voltage (VCBO)40 V
Collector Emitter Breakdown Voltage40 V
Collector Emitter Saturation Voltage500 mV
Collector Emitter Voltage (VCEO)40 V
Element ConfigurationDual
Emitter Base Voltage (VEBO)5 V
Frequency150 MHz
Gain Bandwidth Product150 MHz
hFE Min200
Max Breakdown Voltage40 V
Max Collector Current1 A
Max Frequency150 MHz
Max Operating Temperature150 °C
Max Power Dissipation600 mW
Min Operating Temperature-65 °C
Number of Elements2
PolarityNPN, PNP
Power Dissipation370 mW
Schedule B8541210080
Transition Frequency150 MHz
Dimensions
Height1 mm
Length3.1 mm
Width1.7 mm
Conformité
Classification environnementale
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
RatingsAEC-Q101
REACH SVHCYes
RoHSCompliant
Déclarations de conformité