Infineon PTFB211503ELV1R250XTMA1

RF Power Field-Effect Transistor, 1-Element, S Band, Silicon, N-Channel, Metal-oxide Semiconductor FET

LDMOS FET, High Power RF, 150W, 2.11-2.17GHz, H-33288-6 Pkg, T/R 250

IC AMP RF LDMOS

High Power RF LDMOS FET, 150 W, 30 V, 2110 2170 MHz | Summary of Features: Broadband internal matching; Enhanced for use in DPD error correction systems; Typical two-carrier WCDMA performance at 2170 MHz, 30 V, - Average output power = 32 W - Linear Gain = 18 dB - Efficiency = 29% - Intermodulation distortion = 34 dBc - Adjacent channel power = 37 dBc; Typical CW performance, 2170 MHz, 30 V - Output power at P1dB = 150 W - Efficiency = 55%; Increased negative gate-source voltage range for improved performance in Doherty peaking amplifiers; Integrated ESD protection; Capable of handling 10:1 VSWR @ 30 V, 150 W (CW) output power; Pb-Free and RoHS compliant; Package: H-33288-6, bolt-down