Infineon IRL540NPBF

MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 0.044Ohm;ID 36A;TO-220AB;PD 140W;VGS +/-16V

MOSFET N-CH 100V 36A TO220AB N-Channel 100 V 36A (Tc) 140W (Tc) Through Hole TO-220AB

MOSFET, 100V, 36A, 44 MOHM, 49.3 NC QG, LOGIC LEVEL, TO-220A

100V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS

Single N-Channel 100 V 0.063 Ohm 74 nC HEXFET® Power Mosfet - TO-220-3

Transistor MOSFET N-Ch. 36A/100V TO220 IRL 540 NPBF

Power MOSFET, N Channel, 100 V, 36 A, 0.044 ohm, TO-220AB, Through Hole

HEXFET POWER MOSFET Power Field-Effect Transistor, 36A I(D), 100V, 0.053ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.

MOSFET, N, 100V, 36A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:30A; Drain Source Voltage Vds:100V; On Resistance Rds(on):44mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2V; Power Dissipation Pd:94W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:36A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Junction to Case Thermal Resistance A:1.1°C/W; Lead Spacing:2.54mm; No. of Transistors:1; Package / Case:TO-220AB; Power Dissipation Pd:94W; Power Dissipation Pd:94W; Pulse Current Idm:120A; Termination Type:Through Hole; Voltage Vds Typ:100V; Voltage Vgs Max:16V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2V