Infineon IRFU9024NPBF

MOSFET, Power; P-Channel; 20 Volts (Max.); -11 A (Max.); 38 W; 13 ns (Typ.)

Single P-Channel 55 V 0.175 Ohm 19 nC HEXFET® Power Mosfet - TO-251

Power MOSFET(Vdss=-55V, Rds(on)=0.175ohm, Id=-11A) | MOSFET P-CH 55V 11A I-PAK

-55V Single P-Channel HEXFET Power MOSFET in a I-Pak package, IPAK-3, RoHS

Power Field-Effect Transistor, 11A I(D), 55V, 0.175ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA

P CHANNEL MOSFET, -55V, 11A, IPAK; Trans; Transistor Polarity:P Channel; Continuous Drain Current Id:11A; Drain Source Voltage Vds:55V; On Resistance Rds(on):175mohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs Typ:-4V; Power Dissipation Pd:38W; Transistor Case Style:I-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:I-PAK; Current Id Max:-11A; Current Temperature:25°C; Junction to Case Thermal Resistance A:3.3°C/W; Package / Case:IPAK; Power Dissipation Pd:38W; Power Dissipation Pd:38W; Pulse Current Idm:44A; SMD Marking:IRFU 9024N; Termination Type:Through Hole; Turn Off Time:23ns; Turn On Time:13ns; Voltage Vds Typ:-55V; Voltage Vgs Max:-4V; Voltage Vgs Rds on Measurement:-10V

The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.