Infineon IRFU5305PBF

MOSFET, Power;P-Ch;VDSS -55V;RDS(ON) 0.065Ohm;ID -31A;I-Pak (TO-251AA);PD 110W

Single P-Channel 55 V 0.065 Ohm 63 nC HEXFET® Power Mosfet - TO-251AA

-55V Single N-Channel HEXFET Power MOSFET in a I-Pak package, IPAK-3, RoHS

Power Field-Effect Transistor, 31A I(D), 55V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA

Transistor Polarity:p Channel; Drain Source Voltage Vds:55V; Continuous Drain Current Id:22A; On Resistance Rds(On):0.065Ohm; Transistor Mounting:through Hole; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; No. Of Pins:3Pinsrohs Compliant: Yes

The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.

Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = -31 / Drain-Source Voltage (Vds) V = -55 / ON Resistance (Rds(on)) mOhm = 65 / Gate-Source Voltage V = 20 / Fall Time ns = 63 / Rise Time ns = 66 / Turn-OFF Delay Time ns = 39 / Turn-ON Delay Time ns = 14 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-251 / Pins = 3 / Mounting Type = Through Hole / MSL = Level-1 / Packaging = Tube / Reflow Temperature Max. °C = 300 / Power Dissipation (Pd) W = 110

MOSFET, P, -55V, -28A, I-PAK; Transistor Polarity:P Channel; Continuous Drain Current Id:22A; Drain Source Voltage Vds:55V; On Resistance Rds(on):65mohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs Typ:-4V; Power Dissipation Pd:69W; Transistor Case Style:TO-251AA; No. of Pins:3; SVHC:No SVHC (18-Jun-2012); Alternate Case Style:I-PAK; Avalanche Single Pulse Energy Eas:280mJ; Capacitance Ciss Typ:1200pF; Current Iar:16A; Current Id Max:-31A; Current Temperature:25°C; Fall Time tf:63ns; Full Power Rating Temperature:25°C; Junction Temperature Tj Max:175°C; Junction Temperature Tj Min:-55°C; Junction to Case Thermal Resistance A:1.8°C/W; Lead Length:9.65mm; Lead Spacing:2.28mm; No. of Transistors:1; On State resistance @ Vgs = 10V:65mohm; Package / Case:IPAK; Power Dissipation Pd:69W; Power Dissipation Pd:110W; Pulse Current Idm:110A; Repetitive Avalanche Energy Max:6.9mJ; Rise Time:66ns; Termination Type:Through Hole; Turn Off Time:39ns; Turn On Time:14ns; Voltage Vds Typ:-55V