Infineon IRFP064NPBF
$ 1.135
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Tendance sur 3 mois : -12.14%
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Price @ 1000
$ 1.135
$ 1.85
Stock
1,681,816
175,442
Authorized Distributors
6
3
Mount
Through Hole
Through Hole
Case/Package
TO-247-3
TO-247-3
Drain to Source Voltage (Vdss)
55 V
55 V
Continuous Drain Current (ID)
110 A
110 A
Threshold Voltage
4 V
2 V
Rds On Max
8 mΩ
8 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
Power Dissipation
150 W
200 W
Input Capacitance
4 nF
4 nF
Chaîne d'approvisionnement
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1996-02-01
Lifecycle StatusProduction (Last Updated: 3 weeks ago)
Pièces détachées
InfineonIRFP054NPBF
MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 0.012Ohm;ID 81A;TO-247AC;PD 170W;VGS +/-20V
InfineonIRFP048NPBF
MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 0.016Ohm;ID 64A;TO-247AC;PD 140W;VGS +/-20V
Descriptions
Descriptions de Infineon IRFP064NPBF fournies par ses distributeurs.
MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 0.008Ohm;ID 110A;TO-247AC;PD 200W;VGS +/-20V
Single N-Channel 55 V 8 mOhm 32 nC HEXFET® Power Mosfet - TO-247-3AC
In a Tube of 25, N-Channel MOSFET, 110 A, 55 V, 3-Pin TO-247AC Infineon IRFP064NPBF
55V Single N-Channel HEXFET Power MOSFET in a TO-247AC package, TO247-3, RoHS
Infineon SCT
IRFP064NPBF,MOSFET, 55V, 98A, 8 MOHM, 113.3 NC QG, TO-247AC<
Transistor MOSFET N-CH 55V 98A 3-Pin TO-247AC Tube
Power Field-Effect Transistor, 110A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC
N Channel Mosfet, 55V, 110A, To-247Ac; Transistor Polarity:N Channel; Drain Source Voltage Vds:55V; Continuous Drain Current Id:110A; On Resistance Rds(On):0.008Ohm; Transistor Mounting:Through Hole; Rds(On) Test Voltage Vgs:10V Rohs Compliant: Yes |Infineon IRFP064NPBF.
The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.
MOSFET, N, 55V, 98A, TO-247AC; Transistor Polarity:N Channel; Continuous Drain Current Id:98A; Drain Source Voltage Vds:55V; On Resistance Rds(on):8mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:150W; Transistor Case Style:TO-247AC; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:110A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Junction to Case Thermal Resistance A:1°C/W; Lead Spacing:5.45mm; No. of Transistors:1; Package / Case:TO-247AC; Power Dissipation Pd:150W; Power Dissipation Pd:150W; Pulse Current Idm:390A; Termination Type:Through Hole; Voltage Vds Typ:55V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 110 / Drain-Source Voltage (Vds) V = 55 / ON Resistance (Rds(on)) mOhm = 8 / Gate-Source Voltage V = 20 / Fall Time ns = 70 / Rise Time ns = 100 / Turn-OFF Delay Time ns = 43 / Turn-ON Delay Time ns = 14 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-247AC / Pins = 3 / Mounting Type = Through Hole / Packaging = Tube / Power Dissipation (Pd) W = 200
Alias du fabricant
Infineon possède plusieurs marques à travers le monde que les distributeurs peuvent utiliser comme noms alternatifs. Infineon peut également être connu sous les noms suivants :
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Historique des stocks
Tendance sur 3 mois : -12.14%
Modèles CAO
Télécharger le symbole, l’empreinte et le 3D STEP
Pièces de rechange
1 composant disponible
Spécifications techniques
Physical
Case/PackageTO-247-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)110 A
Current Rating110 A
Drain to Source Breakdown Voltage55 V
Drain to Source Resistance8 mΩ
Drain to Source Voltage (Vdss)55 V
Dual Supply Voltage55 V
Element ConfigurationSingle
Fall Time70 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance4 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation150 W
Min Breakdown Voltage55 V
Min Operating Temperature-55 °C
Nominal Vgs4 V
Number of Channels1
Number of Elements1
On-State Resistance8 mΩ
Package Quantity400
PackagingBulk
Power Dissipation150 W
Rds On Max8 mΩ
Recovery Time170 ns
Resistance8 MΩ
Rise Time100 ns
Schedule B8541290080
TerminationThrough Hole
Threshold Voltage4 V
Turn-Off Delay Time43 ns
Turn-On Delay Time14 ns
Voltage Rating (DC)55 V
Dimensions
Height24.99 mm
Lead Pitch5.45 mm
Length15.875 mm
Width5.3 mm
Conformité
Classification environnementale
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Déclarations de conformité