Infineon IRF8714PBF
Obsolete
Prix et stock
Distributeurs agréés
Distributeurs de solutions de stockage non agréés
Revendeurs non agréés
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Avnet | IRF8714PBF | 2 948 | 10K | 14h | ||||||||
| Flip Electronics | IRF8714PBF | 2 948 | 6d | |||||||||
| RS (Formerly Allied Electronics) | IRF8714PBF | 0 | 3800 | Bulk | 3h | |||||||
| Farnell | IRF8714PBF | 0 | 5 | 12h | ||||||||
| Win Source | WS-IRF8714PBF | 10 090 | 115 | 13h |
Historique des stocks
Tendance sur 3 mois : -14.29%
Modèles CAO
Télécharger le symbole, l’empreinte et le 3D STEP
Pièces de rechange
1 composant disponible
Pièces de rechange
Ce composant
Pièces de rechange
Price @ 1000
$ 0.268
Stock
1,825,192
4,927,774
Authorized Distributors
4
6
Mount
Surface Mount
Surface Mount
Case/Package
SO
SO
Drain to Source Voltage (Vdss)
30 V
30 V
Continuous Drain Current (ID)
14 A
14 A
Threshold Voltage
1.8 V
-
Rds On Max
8.7 mΩ
8.7 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
Power Dissipation
2.5 W
2.5 W
Input Capacitance
1.02 nF
1.02 nF
Chaîne d'approvisionnement
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2007-08-01
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2018-12-15
LTD Date2019-06-15
Pièces détachées
InfineonIRF8714GTRPBF
Trans MOSFET N-CH Si 30V 14A 8-Pin SOIC T/R / MOSFET N-CH 30V 14A 8-SOIC
VishaySI4172DY-T1-GE3
Single N-Channel 30 V 0.012 Ohm 4.5 W Surface Mount Power Mosfet - SOIC-8
InfineonIRF8113GPBF
N CH POWER MOSFET, HEXFET, 30V, 17.2A, SOIC-8; Transistor Polarity:N Channel; Co
Diodes Inc.DMG4406LSS-13
Single N-Channel 30 V 2 W 12.5 nC Silicon Surface Mount Mosfet - SOIC-8
Descriptions
Descriptions de Infineon IRF8714PBF fournies par ses distributeurs.
Single N-Channel 30 V 13 mOhm 12 nC HEXFET® Power Mosfet - SOIC-8
MOSFET, N Ch., 30V, 14A, 8.7 MOHM, 8.1 NC QG, SO-8, Pb-Free
30V Single N-Channel HEXFET Power MOSFET in a SO-8 package, SO8, RoHS
Infineon SCT
Trans MOSFET N-CH 30V 14A 8-Pin SOIC
Benefits: RoHS Compliant | Target Applications: Battery Protection; Load Switch High Side; Load Switch Low Side
Power Field-Effect Transistor, 14A I(D), 30V, 0.0087ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
N-CH 30V 14A 8,7mOhm SO8 RoHSconf
Trench_Mosfets Rohs Compliant: Yes
MOSFET, N SO-8; Transistor Polarity:N Channel; Continuous Drain Current Id:14A; Drain Source Voltage Vds:30V; On Resistance Rds(on):8.7mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.8V; Power Dissipation Pd:2.5W; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Charge Qrr @ Tj = 25°C Typ:8.1nC; Current Id Max:14A; Package / Case:SOIC; Power Dissipation Pd:2.5W; Power Dissipation Pd:2.5W; Pulse Current Idm:110A; Termination Type:SMD; Voltage Vds:30V; Voltage Vds Typ:30V; Voltage Vgs Max:1.8V; Voltage Vgs Rds on Measurement:10V
Alias du fabricant
Infineon possède plusieurs marques à travers le monde que les distributeurs peuvent utiliser comme noms alternatifs. Infineon peut également être connu sous les noms suivants :
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Historique des stocks
Tendance sur 3 mois : -14.29%
Modèles CAO
Télécharger le symbole, l’empreinte et le 3D STEP
Pièces de rechange
1 composant disponible
Spécifications techniques
Physical
Case/PackageSO
MountSurface Mount
Number of Pins8
Number of Terminals8
Technical
Continuous Drain Current (ID)14 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance8.7 mΩ
Drain to Source Voltage (Vdss)30 V
Dual Supply Voltage30 V
Element ConfigurationSingle
Fall Time5 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.02 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation2.5 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Nominal Vgs1.8 V
Number of Channels1
Number of Elements1
On-State Resistance8.7 mΩ
Package Quantity3800
Power Dissipation2.5 W
Rds On Max8.7 mΩ
Recovery Time21 ns
Resistance8.7 MΩ
Rise Time9.9 ns
Schedule B8541290080
TerminationSMD/SMT
Threshold Voltage1.8 V
Turn-Off Delay Time11 ns
Turn-On Delay Time10 ns
Dimensions
Height1.75 mm
Length4.9784 mm
Width3.9878 mm
Conformité
Classification environnementale
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Déclarations de conformité