Infineon IRF7105PBF
Obsolete
Prix et stock
Distributeurs agréés
Distributeurs de solutions de stockage non agréés
Revendeurs non agréés
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| RS (Formerly Allied Electronics) | IRF7105PBF | 0 | 3800 | Bulk | 12h | |||||||
| Farnell | IRF7105PBF | 0 | 1 | 5h | ||||||||
| Win Source | WS-IRF7105PBF | 36 290 | 230 | 21h | ||||||||
| Worldway Electronics | IRF7105PBF | 9 472 | 7 | Tube | 19h | |||||||
| ICPartonline | IRF7105PBF | 38 067 | 2d |
Modèles CAO
Télécharger le symbole, l’empreinte et le 3D STEP
Pièces de rechange
0 composant disponible
Chaîne d'approvisionnement
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1995-07-01
Lifecycle StatusObsolete (Last Updated: 4 months ago)
Pièces détachées
InfineonIRF7105TRPBF
Trans MOSFET N/P-CH 25V 3.5A/2.3A 8-Pin SOIC T/R / MOSFET N/P-CH 25V 8-SOIC
InfineonIRF9952TRPBF
MOSFET N/P-CH 30V 8-SOIC / Trans MOSFET N/P-CH 30V 3.5A/2.3A 8-Pin SOIC N T/R
Descriptions
Descriptions de Infineon IRF7105PBF fournies par ses distributeurs.
Transistor MOSFET N P Channel 25 Volt 3.5 Amp-2.3 Amp 8 Pin SOIC
Dual N/P-Channel 25 V 0.16/0.4 Ohm 27/25 nC HEXFET® Power Mosfet - SOIC-8
Trans MOSFET N/P-CH 25V 3.5A/2.3A 8-Pin SOIC
25V Dual N- and P- Channel HEXFET Power MOSFET in a SO-8 package, SO8, RoHS
Infineon SCT
Power Field-Effect Transistor, 3.5A I(D), 25V, 0.1ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
MOSFET, DUAL, NP, LOGIC, SO-8; Transistor Polarity:N and P Channel; Continuous Drain Current Id:2.3A; Drain Source Voltage Vds:25V; On Resistance Rds(on):100mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:2W; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (19-Dec-2011); Cont Current Id N Channel 2:3.5A; Cont Current Id P Channel:2.3A; Current Id Max:3.5A; Current Temperature:25°C; External Depth:5.2mm; External Length / Height:1.75mm; External Width:4.05mm; Full Power Rating Temperature:25°C; Junction Temperature Tj Max:150°C; Junction Temperature Tj Min:-55°C; No. of Transistors:2; On State Resistance N Channel Max:100mohm; On State Resistance P Channel Max:250mohm; Package / Case:SOIC; Power Dissipation Pd:2W; Power Dissipation Pd:2W; Pulse Current Idm:10A; Pulse Current Idm N Channel 2:14A; Pulse Current Idm P Channel:10A; Row Pitch:6.3mm; SMD Marking:F7105; Termination Type:SMD; Voltage Vds:25V; Voltage Vds Typ:25V; Voltage Vgs Max:3V
Alias du fabricant
Infineon possède plusieurs marques à travers le monde que les distributeurs peuvent utiliser comme noms alternatifs. Infineon peut également être connu sous les noms suivants :
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Modèles CAO
Télécharger le symbole, l’empreinte et le 3D STEP
Pièces de rechange
0 composant disponible
Spécifications techniques
Physical
Case/PackageSOIC
MountSurface Mount
Number of Pins8
Number of Terminals8
Technical
Continuous Drain Current (ID)3.5 A
Current Rating3.5 A
Drain to Source Breakdown Voltage25 V
Drain to Source Resistance100 mΩ
Drain to Source Voltage (Vdss)25 V
Fall Time37 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance330 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation2 W
Min Breakdown Voltage25 V
Min Operating Temperature-55 °C
Nominal Vgs3 V
Number of Elements2
On-State Resistance100 mΩ
Package Quantity3800
PackagingBulk
Power Dissipation2 W
Rds On Max100 mΩ
Resistance100 mΩ
Rise Time13 ns
Threshold Voltage3 V
Turn-Off Delay Time45 ns
Turn-On Delay Time7 ns
Dimensions
Height1.4986 mm
Length4.9784 mm
Conformité
Classification environnementale
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Déclarations de conformité