Infineon IR21368PBF

Tube IR21368PBF Half-Bridge 2008 gate driver 190ns 125C 200mA 350mA 1.5W
Obsolete
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Téléchargez les fiches techniques et la documentation du fabricant pour Infineon IR21368PBF.

SHENGYU ELECTRONICS

Datasheet36 pagesIl y a 17 ans

IHS

DigiKey

iiiC

Chaîne d'approvisionnement

Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8542.39.00.60
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2014-04-25
LTD Date2014-04-25

Descriptions

Descriptions de Infineon IR21368PBF fournies par ses distributeurs.

Tube IR21368PBF Half-Bridge 2008 gate driver 190ns 125C 200mA 350mA 1.5W
MOSFET DRVR 600V 0.35A 6-OUT Hi/Lo Side 3-Phase Brdg Inv 28-Pin PDIP W
Half Bridge Based IGBT/MOSFET Driver, 0.35A, CMOS, PDIP28
MOSFET Driver IC; Device Type:Bridge; No. of Outputs:6; Output Voltage:620V; Output Current:350mA; Power Dissipation, Pd:1.5W; Supply Voltage Min:10V; Supply Voltage Max:20V; Termination Type:Through Hole; Package/Case:28-DIP ;RoHS Compliant: Yes
The IR2136/IR21362/IR21363/IR21365/IR21366/IR21367/IR21368(J&S) are high votage, high speed power MOSFET and IGBT drivers with three independent high and low side referenced output channels for 3-phase applications. Proprietary HVIC technology enables ruggedized monolithic construction. Logic inputs are compatible with CMOS or LSTTL outputs, down to 3.3V logic. A current trip function which terminates all six outputs can be derived from an external current sense resistor. An enable function is available to terminate all six outputs simultaneously. An open-drain FAULT signal is provided to indicate that an over current or under voltage shutdown has occurred. Over current fault conditions are cleared automatically after a delay programmed externally via an RC network connected to the RCIN input. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. Propagation delays are matched to simplify use in high frequency applications. The floating channel can be used to drive N-channel power MOSFETs or IGBTs in the high side configuration which operates up to 600 volts.

Alias du fabricant

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  • Infineon Technologies
  • INF
  • INFINEO
  • INFINE
  • INFIN
  • INFINION
  • INFI
  • INFENION
  • SIM
  • INFIEON
  • INFINEON TECH
  • INFINEN
  • IFX
  • INFIENON
  • IR/INFINEON
  • INFINEON/IR
  • IFT
  • INFINEON/SIEMENS
  • LNFINEON
  • INFN
  • Infineon Tech ICs
  • INFINEON TECHNOLOGIE
  • NFINEON
  • INFINEON/Infineon
  • INFINEON TECHNOLOGIES (ASIA

Alias de numéro de pièce

Ce composant peut être référencé sous ces autres numéros :

  • IRFIR21368PBF